Tin-based group IV semiconductors: New platforms for opto-and microelectronics on silicon
▪ Abstract New classes of Sn-containing group IV semiconductors are described. Novel CVD
routes lead to growth of a broad range of Ge1− y Sn y alloys and compounds directly on Si …
routes lead to growth of a broad range of Ge1− y Sn y alloys and compounds directly on Si …
Optical critical points of thin-film alloys: A comparative study
The E 0, E 0+ Δ 0, E 1, E 1+ Δ 1, E 0′, and E 2 optical transitions have been measured in
Ge 1− y Sn y alloys (y< 0.2) using spectroscopic ellipsometry and photoreflectance. The …
Ge 1− y Sn y alloys (y< 0.2) using spectroscopic ellipsometry and photoreflectance. The …
[КНИГА][B] Integrated silicon optoelectronics
H Zimmermann, H Zimmermann - 2010 - Springer
Since the first edition of this book, a lot of interesting integrated optoelectronic devices were
investigated and introduced in numerous publications. Therefore, Springer and me decided …
investigated and introduced in numerous publications. Therefore, Springer and me decided …
Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission
DJ Lockwood, X Wu, JM Baribeau, SA Mala… - Frontiers in …, 2016 - frontiersin.org
Fast optical interconnects together with an associated light emitter that are both compatible
with conventional Si-based complementary metal-oxide-semiconductor (CMOS) integrated …
with conventional Si-based complementary metal-oxide-semiconductor (CMOS) integrated …
Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon …
(57) ABSTRACT A Semiconductor component, Selected from the group com prising a
photodetector, a light emitting diode, an optical modulator and a waveguide. The …
photodetector, a light emitting diode, an optical modulator and a waveguide. The …
Light emission in silicon
DJ Lockwood - Semiconductors and Semimetals, 1997 - Elsevier
Publisher Summary This chapter describes light emission in silicon (Si). The many and
diverse approaches to materials science problems have greatly enhanced ability in recent …
diverse approaches to materials science problems have greatly enhanced ability in recent …
Si/Si/sub 1-xy/GexCy/Si heterojunction bipolar transistors
LD Lanzerotti, AS Amour, CW Liu… - IEEE Electron …, 1996 - ieeexplore.ieee.org
We report the first Si/Si/sub 1-xy/Ge/sub x/C/sub y//Si npn heterojunction bipolar transistors
and the first electrical bandgap measurements of strained Si/sub 1-xy/Ge/sub x/C/sub y/on Si …
and the first electrical bandgap measurements of strained Si/sub 1-xy/Ge/sub x/C/sub y/on Si …
Pseudomorphic Si1− yCy and Si1− x− yGexCy alloy layers on Si
K Eberl, K Brunner, W Winter - Thin Solid Films, 1997 - Elsevier
High-quality pseudomorphic Si1− yCy and Si1− x− yGexCy alloy layers with a carbon
concentration up to 7% are prepared by solid-source molecular beam epitaxy. Near band …
concentration up to 7% are prepared by solid-source molecular beam epitaxy. Near band …
Photoluminescence of Tensile Strained, Exactly Strain Compensated, and Compressively Strained Layers on Si
Band edge related photoluminescence is observed from strain compensated Si 1− x− y Ge x
C y multiple quantum wells. For (87±4) Å thick quantum wells, the no-phonon energy …
C y multiple quantum wells. For (87±4) Å thick quantum wells, the no-phonon energy …
The effect of carbon on the valence band offset of compressively strained /(100) Si heterojunctions
CL Chang, A St. Amour, JC Sturm - Applied physics letters, 1997 - pubs.aip.org
Capacitance–voltage measurements have been used to study the effect of carbon on the
valence band offset of compressively strained Si 1− x− y Ge x C y/(100) Si heterojunctions …
valence band offset of compressively strained Si 1− x− y Ge x C y/(100) Si heterojunctions …