Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …

The flexoelectricity describes the contribution of the linear couplings between the electric
polarization and strain gradient and between polarization gradient and strain to the …

Ferroelectric domain wall memories have been proposed as a promising candidate for
nonvolatile memories, given their intriguing advantages including low energy consumption …

Flexoelectricity—the coupling between polarization and strain gradients—is a universal
effect allowed by symmetry in all materials. Following its discovery several decades ago …

Topological spin/polarization structures in ferroic materials continue to draw great attention
as a result of their fascinating physical behaviors and promising applications in the field of …

Hetero interfaces between metal-oxides display pronounced phenomena such as
semiconductor-metal transitions, magnetoresistance, the quantum hall effect and …

The charged domain wall is an ultrathin (typically nanosized) interface between two
domains; it carries bound charge owing to a change of normal component of spontaneous …

A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which
shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are …

Impurity elements used as dopants are essential to semiconductor technology for controlling
the concentration of charge carriers. Their location in the semiconductor crystal is …