Two-dimensional devices and integration towards the silicon lines
Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …
2D materials in flexible electronics: recent advances and future prospectives
Flexible electronics have recently gained considerable attention due to their potential to
provide new and innovative solutions to a wide range of challenges in various electronic …
provide new and innovative solutions to a wide range of challenges in various electronic …
Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform
Abstract Two-dimensional (2D) materials are promising candidates for future electronics due
to their excellent electrical and photonic properties. Although promising results on the wafer …
to their excellent electrical and photonic properties. Although promising results on the wafer …
Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire
Abstract Two-dimensional (2D) semiconductors, in particular transition metal
dichalcogenides (TMDCs), have attracted great interest in extending Moore's law beyond …
dichalcogenides (TMDCs), have attracted great interest in extending Moore's law beyond …
12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture
Abstract Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides,
provide an opportunity for beyond-silicon exploration. However, the lab to fab transition of …
provide an opportunity for beyond-silicon exploration. However, the lab to fab transition of …
Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives
The fabrication of wafer-scale two-dimensional (2D) materials is a prerequisite and
important step for their industrial applications. Chemical vapor deposition (CVD) is the most …
important step for their industrial applications. Chemical vapor deposition (CVD) is the most …
Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals
Rhombohedral-stacked transition-metal dichalcogenides (3R-TMDs), which are distinct from
their hexagonal counterparts, exhibit higher carrier mobility, sliding ferroelectricity, and …
their hexagonal counterparts, exhibit higher carrier mobility, sliding ferroelectricity, and …
Bilayer of polyelectrolyte films for spontaneous power generation in air up to an integrated 1,000 V output
Environmentally adaptive power generation is attractive for the development of next-
generation energy sources. Here we develop a heterogeneous moisture-enabled electric …
generation energy sources. Here we develop a heterogeneous moisture-enabled electric …
Emerging MoS2 Wafer-Scale Technique for Integrated Circuits
Z Ye, C Tan, X Huang, Y Ouyang, L Yang, Z Wang… - Nano-micro letters, 2023 - Springer
As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has
excellent physical properties, such as high carrier mobility, stability, and abundance on …
excellent physical properties, such as high carrier mobility, stability, and abundance on …
Vapour-phase deposition of two-dimensional layered chalcogenides
Abstract Two-dimensional (2D) layered materials are attracting a lot of attention because of
unique physicochemical properties that are intriguing for both fundamental research and …
unique physicochemical properties that are intriguing for both fundamental research and …