Application of Nanostructured TiO2 in UV Photodetectors: A Review

Z Li, Z Li, C Zuo, X Fang - Advanced Materials, 2022 - Wiley Online Library
As a wide‐bandgap semiconductor material, titanium dioxide (TiO2), which possesses three
crystal polymorphs (ie, rutile, anatase, and brookite), has gained tremendous attention as a …

[HTML][HTML] CuO–TiO2 based self-powered broad band photodetector

C Ghosh, A Dey, I Biswas, RK Gupta, VS Yadav… - Nano Materials …, 2024 - Elsevier
An efficient room-temperature self-powered, broadband (300​ nm–1100 nm) photodetector
based on a CuO–TiO 2/TiO 2/p-Si (100) heterostructure is demonstrated. The CuO–TiO 2 …

Improved photodetector performance of high-k dielectric material (La) doped V2O5 thin films as an interfacial layer in Schottky barrier diodes

V Balasubramani, J Chandrasekaran… - Surfaces and …, 2021 - Elsevier
In this work, high-k dielectric material of lanthanum (La) doped vanadium pentoxide (V 2 O
5) thin films is deposited on glass substrate using spin coating route and annealed at 500° …

Ag nanoparticles decorated AZO/p-Si heterojunction UV photodetector

K Ozel - Optics & Laser Technology, 2024 - Elsevier
Light-trap** strategies are of paramount importance for fabricating high-performance
photodetectors (PDs) and photovoltaic cells. One effective strategy is the utilization of …

Characteristics of Mg doped TiO2 thin film based deep UV photodetector

A Dalal, M Mishra, S Chakrabarti, RK Gupta, A Mondal - Vacuum, 2022 - Elsevier
Co-do** of Mg into chemically stable TiO 2 thin film is attractive for deep UV detection. In
this report, we have fabricated∼ 110 nm undoped TiO 2 thin film and Mg doped TiO 2 thin …

Plasmons Enhancing Sub-Bandgap Photoconductivity in TiO2 Nanoparticles Film

MA Ibrahem, E Verrelli, AM Adawi, JSG Bouillard… - ACS …, 2024 - ACS Publications
The coupling between sub-bandgap defect states and surface plasmon resonances in Au
nanoparticles and its effects on the photoconductivity performance of TiO2 are investigated …

Ag nanoparticle assisted vertically aligned β-Ga2O3 nanowire deposited by GLAD technique for ultrafast photodetection

SR Meitei, LS Devi, NK Singh - Optical Materials, 2023 - Elsevier
In this study, we report the fabrication of Silver (Ag) nanoparticle (NP) assisted vertically
oriented β-Ga 2 O 3 nanowires on Silicon (Si)-substrate by the Glancing angle deposition …

Enhancing detectivity of indium-oxide-based photodetectors via vertical nanostructuring through glancing angle deposition

A Nath, BK Mahajan, LR Singh, S Vishwas… - Journal of Electronic …, 2021 - Springer
In 2 O 3 vertical nanostructures (VNS) are fabricated using a glancing angle deposition
(GLAD) technique upon an In 2 O 3 thin film (TF) on a n-type silicon (n-Si) substrate …

Sensitivity analysis of physically doped, charge plasma and electrically doped TFET biosensors

A Biswas, C Rajan, DP Samajdar - Silicon, 2021 - Springer
TFET based label-free biosensors are fast, sensitive and more power efficient as compared
to CMOS biosensors, which are prone to short channel effects (SCEs). However, literature is …

Hetero-radial MgO capped TiO2 nanowire arrays as a deep UV and self-powered photodetector

A Dalal, DP Samajdar, A Mondal - Journal of Alloys and Compounds, 2022 - Elsevier
Nanowires acts as a potential component in photodetectors (PDs) owing to its superior
capacity to generate morphology-dependent broad absorption spectrum. In this study, we …