Stretchable electronics outperform existing rigid and bulky electronics and benefit a wide
range of species, including humans, machines, and robots, whose activities are associated …

Two‐dimensional (2D) materials have the potential to extend state‐of‐the‐art semiconductor
technology to sub‐nanometer scales and have inspired numerous research efforts exploring …

We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a
thin layer of BaTiO3 (BTO) dielectric, isolated from its parent epitaxial template substrate …

The combination of graphene with semiconductor materials in heterostructure
photodetectors enables amplified detection of femtowatt light signals using micrometer …

Colloidal quantum dot (QD)/graphene nanohybrid heterostructures provide a promising
scheme for quantum sensors as they take advantage of the strong quantum confinement in …

Graphene field effect transistor sensitized by a layer of semiconductor (sensitizer/GFET) is a
device structure that is investigated extensively for ultrasensitive photodetection. Among …

We exploit scanning-probe-controlled domain patterning in a ferroelectric top layer to induce
nonvolatile modulation of the conduction characteristic of monolayer MoS 2 between a …

While high photoconductive gain has been recently achieved in graphene-based hybrid
phototransistors using semiconductor two-dimensional transition/post-transition metal …

Introducing ferroelectricity to two-dimensional van der Waals (vdW) materials such as
graphene, transition metal dichalcogenides, and black phosphorous presents a promising …

Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with
a nanoscale electronic material in a field effect transistor structure offers the opportunity to …