Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged
as a powerful tool to generate complex magnetic textures, interconvert charge and spin …

Spintronic devices, such as non-volatile magnetic random access memories and logic
devices, have attracted considerable attention as potential candidates for future high …

While spintronics has traditionally relied on ferromagnetic metals as spin generators and
detectors, spin–orbitronics exploits the efficient spin–charge interconversion enabled by …

The building block of in-memory computing with spintronic devices is mainly based on the
magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting …

The efficient detection of a magnetic state at nanoscale dimensions is important for the
development of spin-logic devices. Magnetoresistance effects can be used to detect …

Abstract The Magnetoelectric Spin‐Orbit (MESO) technology aims to bring logic into memory
by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and …

While early magnetic memory designs relied on magnetization switching by locally
generated magnetic fields, key insights in condensed matter physics later suggested the …

One of the major obstacles to realizing spintronic devices such as MESO logic devices is the
small signal magnitude used for magnetization readout, making it important to find materials …

Driving a spin‐logic circuit requires the production of a large output signal by spin‐charge
interconversion in spin‐orbit readout devices. This should be possible by using topological …

The development of advanced spintronics devices hinges on the efficient generation and
utilization of pure spin current. In materials with large spin-orbit coupling, the spin Hall effect …