A review on organic hole transport materials for perovskite solar cells: Structure, composition and reliability

C Zhang, K Wei, J Hu, X Cai, G Du, J Deng, Z Luo… - Materials Today, 2023 - Elsevier
Charge transport materials in heterojunction solar cells (eg perovskite solar cells (PSCs))
play critical roles in determining charge dynamics, photovoltaic performance and device …

Colloquium: Emergent properties in plane view: Strong correlations at oxide interfaces

J Chakhalian, JW Freeland, AJ Millis… - Reviews of Modern …, 2014 - APS
Finding new collective electronic states in materials is one of the fundamental goals of
condensed matter physics. Atomic-scale superlattices formed from transition metal oxides …

A graphene-based hot electron transistor

S Vaziri, G Lupina, C Henkel, AD Smith, M Östling… - Nano …, 2013 - ACS Publications
We experimentally demonstrate DC functionality of graphene-based hot electron transistors,
which we call graphene base transistors (GBT). The fabrication scheme is potentially …

Interface control of bulk ferroelectric polarization

P Yu, W Luo, D Yi, JX Zhang… - Proceedings of the …, 2012 - National Acad Sciences
The control of material interfaces at the atomic level has led to novel interfacial properties
and functionalities. In particular, the study of polar discontinuities at interfaces between …

Vertical transistors based on 2D materials: Status and prospects

F Giannazzo, G Greco, F Roccaforte, SS Sonde - Crystals, 2018 - mdpi.com
Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides
(TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the …

Low‐dimensional perovskites: from synthesis to stability in perovskite solar cells

ARM Yusoff, MK Nazeeruddin - Advanced Energy Materials, 2018 - Wiley Online Library
Perovskite solar cells have been heralded as one of the most promising emerging
technologies in 2016 because of the very high power conversion efficiency of 22% and the …

Positive-bias gate-controlled metal–insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics

T Yajima, T Nishimura, A Toriumi - Nature communications, 2015 - nature.com
The next generation of electronics is likely to incorporate various functional materials,
including those exhibiting ferroelectricity, ferromagnetism and metal–insulator transitions …

Interplay of octahedral tilts and polar order in BiFeO3 films.

YM Kim, A Kumar, A Hatt, AN Morozovska… - … (Deerfield Beach, Fla …, 2013 - europepmc.org
Heterointerface stabilization of a distinct nonpolar BiFeO3 phase occurs simultaneously with
changes in octahedral tilts. The resulting phase arises via suppression of polarization by a …

GaN/Gr (2D)/Si (3D) combined high-performance hot electron transistors

C Zou, Z Zhao, M Xu, X Wang, Q Liu, K Chen, L He… - ACS …, 2023 - ACS Publications
To overcome the problem of minority carrier storage time in bipolar transistors, a hot electron
transistor (HET) has been proposed. This device has the advantage of high working speed …

Hot electron transistor with van der Waals base-collector heterojunction and high-performance GaN emitter

A Zubair, A Nourbakhsh, JY Hong, M Qi, Y Song… - Nano …, 2017 - ACS Publications
Single layer graphene is an ideal material for the base layer of hot electron transistors
(HETs) for potential terahertz (THz) applications. The ultrathin body and exceptionally long …