2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …
discovered through the extensive experimental and theoretical efforts of chemists, material …
Two-dimensional materials for next-generation computing technologies
Rapid digital technology advancement has resulted in a tremendous increase in computing
tasks imposing stringent energy efficiency and area efficiency requirements on next …
tasks imposing stringent energy efficiency and area efficiency requirements on next …
Ballistic two-dimensional InSe transistors
Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …
[HTML][HTML] Production and processing of graphene and related materials
We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …
and related materials (GRMs), as well as the key characterization procedures. We adopt …
Contact engineering for 2D materials and devices
Over the past decade, the field of two-dimensional (2D) layered materials has surged,
promising a new platform for studying diverse physical phenomena that are scientifically …
promising a new platform for studying diverse physical phenomena that are scientifically …
Materials science challenges to graphene nanoribbon electronics
Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …
Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Quantum engineering of transistors based on 2D materials heterostructures
Quantum engineering entails atom-by-atom design and fabrication of electronic devices.
This innovative technology that unifies materials science and device engineering has been …
This innovative technology that unifies materials science and device engineering has been …
Two-dimensional transistors beyond graphene and TMDCs
Two-dimensional semiconductors (2DSCs) have attracted considerable attention as
atomically thin channel materials for field-effect transistors. Each layer in 2DSCs consists of …
atomically thin channel materials for field-effect transistors. Each layer in 2DSCs consists of …
Electrical contacts to two-dimensional semiconductors
The performance of electronic and optoelectronic devices based on two-dimensional
layered crystals, including graphene, semiconductors of the transition metal dichalcogenide …
layered crystals, including graphene, semiconductors of the transition metal dichalcogenide …