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Wurtzite and fluorite ferroelectric materials for electronic memory
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …
continued research interest since their discovery more than 100 years ago. The …
Imperfection-enabled memristive switching in van der Waals materials
Memristive devices can offer dynamic behaviour, analogue programmability, and scaling
and integration capabilities. As a result, they are of potential use in the development of …
and integration capabilities. As a result, they are of potential use in the development of …
An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning
The growing computational demand in artificial intelligence calls for hardware solutions that
are capable of in situ machine learning, where both training and inference are performed by …
are capable of in situ machine learning, where both training and inference are performed by …
Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics
Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …
their dimensional scalability and incompatibility with complementary metal‐oxide …
High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics
Q Li, S Wang, Z Li, X Hu, Y Liu, J Yu, Y Yang… - Nature …, 2024 - nature.com
With the development of wearable devices and hafnium-based ferroelectrics (FE), there is
an increasing demand for high-performance flexible ferroelectric memories. However …
an increasing demand for high-performance flexible ferroelectric memories. However …
Emergent ferroelectricity in subnanometer binary oxide films on silicon
The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …
Memristor-based artificial chips
Memristors, promising nanoelectronic devices with in-memory resistive switching behavior
that is assembled with a physically integrated core processing unit (CPU) and memory unit …
that is assembled with a physically integrated core processing unit (CPU) and memory unit …
A Zero‐Voltage‐Writing Artificial Nervous System Based on Biosensor Integrated on Ferroelectric Tunnel Junction
The artificial nervous system proves the great potential for the emulation of complex neural
signal transduction. However, a more bionic system design for bio‐signal transduction still …
signal transduction. However, a more bionic system design for bio‐signal transduction still …
Recent advances on neuromorphic devices based on chalcogenide phase‐change materials
Traditional von Neumann computing architecture with separated computation and storage
units has already impeded the data processing performance and energy efficiency, calling …
units has already impeded the data processing performance and energy efficiency, calling …
A ferroelectric fin diode for robust non-volatile memory
G Feng, Q Zhu, X Liu, L Chen, X Zhao, J Liu… - Nature …, 2024 - nature.com
Among today's nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and
field-effect transistors (FET) are already industrially integrated and/or intensively …
field-effect transistors (FET) are already industrially integrated and/or intensively …