Wurtzite and fluorite ferroelectric materials for electronic memory

KH Kim, I Karpov, RH Olsson III, D Jariwala - Nature Nanotechnology, 2023 - nature.com
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

Imperfection-enabled memristive switching in van der Waals materials

M Li, H Liu, R Zhao, FS Yang, M Chen, Y Zhuo… - Nature …, 2023 - nature.com
Memristive devices can offer dynamic behaviour, analogue programmability, and scaling
and integration capabilities. As a result, they are of potential use in the development of …

An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning

H Ning, Z Yu, Q Zhang, H Wen, B Gao, Y Mao… - Nature …, 2023 - nature.com
The growing computational demand in artificial intelligence calls for hardware solutions that
are capable of in situ machine learning, where both training and inference are performed by …

Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics

JY Park, DH Choe, DH Lee, GT Yu, K Yang… - Advanced …, 2023 - Wiley Online Library
Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …

High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Q Li, S Wang, Z Li, X Hu, Y Liu, J Yu, Y Yang… - Nature …, 2024 - nature.com
With the development of wearable devices and hafnium-based ferroelectrics (FE), there is
an increasing demand for high-performance flexible ferroelectric memories. However …

Emergent ferroelectricity in subnanometer binary oxide films on silicon

SS Cheema, N Shanker, SL Hsu, Y Rho, CH Hsu… - Science, 2022 - science.org
The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …

Memristor-based artificial chips

B Sun, Y Chen, G Zhou, Z Cao, C Yang, J Du, X Chen… - ACS …, 2023 - ACS Publications
Memristors, promising nanoelectronic devices with in-memory resistive switching behavior
that is assembled with a physically integrated core processing unit (CPU) and memory unit …

A Zero‐Voltage‐Writing Artificial Nervous System Based on Biosensor Integrated on Ferroelectric Tunnel Junction

X Qin, B Zhong, S Lv, X Long, H Xu, L Li… - Advanced …, 2024 - Wiley Online Library
The artificial nervous system proves the great potential for the emulation of complex neural
signal transduction. However, a more bionic system design for bio‐signal transduction still …

Recent advances on neuromorphic devices based on chalcogenide phase‐change materials

M Xu, X Mai, J Lin, W Zhang, Y Li, Y He… - Advanced Functional …, 2020 - Wiley Online Library
Traditional von Neumann computing architecture with separated computation and storage
units has already impeded the data processing performance and energy efficiency, calling …

A ferroelectric fin diode for robust non-volatile memory

G Feng, Q Zhu, X Liu, L Chen, X Zhao, J Liu… - Nature …, 2024 - nature.com
Among today's nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and
field-effect transistors (FET) are already industrially integrated and/or intensively …