Non-< 111>-oriented semiconductor nanowires: growth, properties, and applications

X Yan, Y Liu, C Zha, X Zhang, Y Zhang, X Ren - Nanoscale, 2023 - pubs.rsc.org
In recent years, non-< 111>-oriented semiconductor nanowires have attracted increasing
interest in terms of fundamental research and promising applications due to their …

[BOOK][B] Theoretical modeling of inorganic nanostructures: Symmetry and ab-initio calculations of nanolayers, nanotubes and nanowires

RA Evarestov - 2015 - books.google.com
This book deals with the theoretical and computational simulation of monoperiodic
nanostructures for different classes of inorganic substances. These simulations are related …

Prediction that Uniaxial Tension along Produces a Direct Band Gap in Germanium

F Zhang, VH Crespi, P Zhang - Physical review letters, 2009 - APS
We predict a new way to achieve a direct band gap in germanium, and hence optical
emission in this technologically important group-IV element: tensile strain along the⟨ 111⟩ …

Strain-modulated electronic properties of Ge nanowires: A first-principles study

P Logan, X Peng - Physical Review B—Condensed Matter and Materials …, 2009 - APS
We used density-functional theory based first-principles simulations to study the effects of
uniaxial strain and quantum confinement on the electronic properties of germanium …

Band structure of Si/Ge core–shell nanowires along the [110] direction modulated by external uniaxial strain

X Peng, F Tang, P Logan - Journal of Physics: Condensed Matter, 2011 - iopscience.iop.org
Strain modulated electronic properties of Si/Ge core–shell nanowires along the [110]
direction were reported, on the basis of first principles density-functional theory calculations …

Self-catalytic growth of elementary semiconductor nanowires with controlled morphology and crystallographic orientation

HS Jang, TH Kim, BG Kim, B Hou, IH Lee, SH Jung… - Nano Letters, 2021 - ACS Publications
While the orientation-dependent properties of semiconductor nanowires have been
theoretically predicted, their study has long been overlooked in many fields owing to the …

From bare Ge nanowire to Ge/Si core/shell nanowires: A first-principles study

R Peköz, JY Raty - Physical Review B—Condensed Matter and Materials …, 2009 - APS
Germanium/Germanium-Silicon core/shell nanowires are expected to play an important role
in future electronic devices. We use first-principles plane-wave calculations within density …

Modifying the band gap and optical properties of germanium nanowires by surface termination

M Legesse, G Fagas, M Nolan - Applied Surface Science, 2017 - Elsevier
Semiconductor nanowires, based on silicon (Si) or germanium (Ge) are leading candidates
for many ICT applications, including next generation transistors, optoelectronics, gas and …

Mechanical and electronic properties of strained Ge nanowires using ab initio real-space pseudopotentials

AJ Lee, M Kim, C Lena, JR Chelikowsky - Physical Review B—Condensed …, 2012 - APS
Theoretical calculations with real-space pseudopotentials constructed within density-
functional theory are employed to calculate mechanical and electronic properties for …

Effects of surface passivation by hydrogen on the structural and electronic properties of a germanium nanowire: A sp3 tight binding study

D Dass - Applied Surface Science, 2019 - Elsevier
The surface passivation is an important technique that suppresses the effects of surface
dangling bonds on the one-dimensional (1D) nanostructure and changes their electronic …