Non-< 111>-oriented semiconductor nanowires: growth, properties, and applications
In recent years, non-< 111>-oriented semiconductor nanowires have attracted increasing
interest in terms of fundamental research and promising applications due to their …
interest in terms of fundamental research and promising applications due to their …
[BOOK][B] Theoretical modeling of inorganic nanostructures: Symmetry and ab-initio calculations of nanolayers, nanotubes and nanowires
RA Evarestov - 2015 - books.google.com
This book deals with the theoretical and computational simulation of monoperiodic
nanostructures for different classes of inorganic substances. These simulations are related …
nanostructures for different classes of inorganic substances. These simulations are related …
Prediction that Uniaxial Tension along Produces a Direct Band Gap in Germanium
We predict a new way to achieve a direct band gap in germanium, and hence optical
emission in this technologically important group-IV element: tensile strain along the⟨ 111⟩ …
emission in this technologically important group-IV element: tensile strain along the⟨ 111⟩ …
Strain-modulated electronic properties of Ge nanowires: A first-principles study
We used density-functional theory based first-principles simulations to study the effects of
uniaxial strain and quantum confinement on the electronic properties of germanium …
uniaxial strain and quantum confinement on the electronic properties of germanium …
Band structure of Si/Ge core–shell nanowires along the [110] direction modulated by external uniaxial strain
Strain modulated electronic properties of Si/Ge core–shell nanowires along the [110]
direction were reported, on the basis of first principles density-functional theory calculations …
direction were reported, on the basis of first principles density-functional theory calculations …
Self-catalytic growth of elementary semiconductor nanowires with controlled morphology and crystallographic orientation
While the orientation-dependent properties of semiconductor nanowires have been
theoretically predicted, their study has long been overlooked in many fields owing to the …
theoretically predicted, their study has long been overlooked in many fields owing to the …
From bare Ge nanowire to Ge/Si core/shell nanowires: A first-principles study
R Peköz, JY Raty - Physical Review B—Condensed Matter and Materials …, 2009 - APS
Germanium/Germanium-Silicon core/shell nanowires are expected to play an important role
in future electronic devices. We use first-principles plane-wave calculations within density …
in future electronic devices. We use first-principles plane-wave calculations within density …
Modifying the band gap and optical properties of germanium nanowires by surface termination
Semiconductor nanowires, based on silicon (Si) or germanium (Ge) are leading candidates
for many ICT applications, including next generation transistors, optoelectronics, gas and …
for many ICT applications, including next generation transistors, optoelectronics, gas and …
Mechanical and electronic properties of strained Ge nanowires using ab initio real-space pseudopotentials
Theoretical calculations with real-space pseudopotentials constructed within density-
functional theory are employed to calculate mechanical and electronic properties for …
functional theory are employed to calculate mechanical and electronic properties for …
Effects of surface passivation by hydrogen on the structural and electronic properties of a germanium nanowire: A sp3 tight binding study
D Dass - Applied Surface Science, 2019 - Elsevier
The surface passivation is an important technique that suppresses the effects of surface
dangling bonds on the one-dimensional (1D) nanostructure and changes their electronic …
dangling bonds on the one-dimensional (1D) nanostructure and changes their electronic …