High confinement, integrated silicon nitride (SiN) waveguides have recently emerged as an
attractive platform for on-chip nonlinear optical devices. The fabrication of high-Q SiN …

Photonic integrated circuits (PICs) capable of ultra-fast, signal processing are recognized as
being fundamental for future applications involving ultra-short optical pulse propagation …

High confinement micron-scale silicon nitride high Q ring resonator clickable element to
expand a topic LOGIN OR CREATE ACCOUNT PRISM SUBMISSION This website uses …

We demonstrate amorphous and polycrystalline anatase TiO_2 thin films and
submicrometer-wide waveguides with promising optical properties for microphotonic …

This paper presents work aimed at optimizing the fabrication of silicon nitride Si_xN_y thin-
film visible-light planar waveguides using plasma-enhanced chemical vapour deposition …

SiN x layers intended for photonic applications are typically fabricated using LPCVD and
PECVD. These techniques rely on high-temperature processing (> 400 C) to obtain low …

Material absorption is a key limitation in nanophotonic systems; however, its characterization
is often obscured by scattering and diffraction. Here we show that nanomechanical …

We investigated low-hydrogen SiN films prepared by a low temperature (350° C) PECVD
method. The impact of SiH_4/N_2 flow ratio and radio frequency power on the hydrogen …

We perform comprehensive studies on the fundamental loss mechanisms in III-nitride
waveguides in the visible spectral region. Theoretical analysis shows that free carrier loss …

Dispersion engineering in silicon nitride (Si_XN_Y) waveguides is investigated through the
optimization of the waveguide transversal dimensions and refractive indices in a …