Cathodoluminescence nanoscopy: state of the art and beyond
Z Dang, Y Chen, Z Fang - ACS nano, 2023 - ACS Publications
Cathodoluminescence (CL) nanoscopy is proven to be a powerful tool to explore nanoscale
optical properties, whereby free electron beams achieve a spatial resolution far beyond the …
optical properties, whereby free electron beams achieve a spatial resolution far beyond the …
Influence of shape and size on GaN/InGaN μLED light emission: A competition between sidewall defects and light extraction efficiency
P González-Izquierdo, N Rochat, D Zoccarato… - ACS …, 2023 - ACS Publications
Micro light-emitting diodes (μLEDs) are expected to revolutionize the display technology due
to their advantages over the current LCD and OLED technology and the possibility to use …
to their advantages over the current LCD and OLED technology and the possibility to use …
Surface recombinations in III-nitride micro-LEDs probed by photon-correlation cathodoluminescence
III-Nitride micro-LEDs are promising building blocks for the next generation of high
performance microdisplays. To reach a high pixel density, it is desired to achieve micro …
performance microdisplays. To reach a high pixel density, it is desired to achieve micro …
Optical Characterization of InGaN Quantum Structures at the Nanoscale
This review paper presents an overview of the optical characterization techniques for Indium
Gallium Nitride (InGaN) quantum well (QW) structures at a nanoscale. The two major …
Gallium Nitride (InGaN) quantum well (QW) structures at a nanoscale. The two major …
Radiation effects in ultra-thin GaAs solar cells
Ultra-thin solar cells are of significant interest for use in space due to their intrinsic radiation
tolerance, which may allow them to be used in particularly harsh radiation environments …
tolerance, which may allow them to be used in particularly harsh radiation environments …
[HTML][HTML] Effect of do** of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability
Abstract GaN/InGaN quantum wells (QWs), widely used as the active region in blue and
green light emitters, are susceptible to structural degradation at temperatures above 900° C …
green light emitters, are susceptible to structural degradation at temperatures above 900° C …
Improving the hole injection efficiency in AlGaN DUV LEDs by minimizing the band offset at the p-EBL/hole supplier interface
W Tian, M Liu, S Li, C Liu - Optical Materials Express, 2023 - opg.optica.org
In AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the large valence band
offset between the Al-rich electron blocking layer (EBL) and p-AlGaN hole supplier weakens …
offset between the Al-rich electron blocking layer (EBL) and p-AlGaN hole supplier weakens …
Enhanced Efficiency InGaN/GaN Multiple Quantum Well Structures via Strain Engineering and Ultrathin Subwells Formed by V-Pit Sidewalls
We study the impact of strain engineering by exploring the influence of the number of
superlattice (SL) layers underneath InGaN/GaN multiple quantum wells (MQWs) on the …
superlattice (SL) layers underneath InGaN/GaN multiple quantum wells (MQWs) on the …
Radiative and nonradiative recombination processes in AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire from 10 to 500 K
R Ishii, S Tanaka, N Susilo, T Wernicke… - … status solidi (b), 2024 - Wiley Online Library
Radiative and nonradiative recombination processes are investigated in the temperature
range from 10 to 500 K for AlGaN quantum wells on epitaxially laterally overgrown …
range from 10 to 500 K for AlGaN quantum wells on epitaxially laterally overgrown …
Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates
Red‐emitting (≈ 643 nm) InGaN multiquantum well active device layers and micro‐LEDs
are grown by metal organic chemical vapor deposition (MOCVD) on relaxed InGaN …
are grown by metal organic chemical vapor deposition (MOCVD) on relaxed InGaN …