Nanowire electronics: from nanoscale to macroscale
Semiconductor nanowires have attracted extensive interest as one of the best-defined
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …
classes of nanoscale building blocks for the bottom-up assembly of functional electronic and …
Synthesis and properties of antimonide nanowires
Antimonide semiconductors are suitable for low-power electronics and long-wavelength
optoelectronic applications. In recent years research on antimonide nanowires has become …
optoelectronic applications. In recent years research on antimonide nanowires has become …
Vertical GeSn nanowire MOSFETs for CMOS beyond silicon
The continued downscaling of silicon CMOS technology presents challenges for achieving
the required low power consumption. While high mobility channel materials hold promise for …
the required low power consumption. While high mobility channel materials hold promise for …
From InSb nanowires to nanocubes: looking for the sweet spot
High aspect ratios are highly desired to fully exploit the one-dimensional properties of
indium antimonide nanowires. Here we systematically investigate the growth mechanisms …
indium antimonide nanowires. Here we systematically investigate the growth mechanisms …
High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire
Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared
photodetectors based on a metal–semiconductor-metal (MSM) structure. The InSb …
photodetectors based on a metal–semiconductor-metal (MSM) structure. The InSb …
Investigation of electro-optical properties of InSb under the influence of spin-orbit interaction at room temperature
To investigate the electro-optical properties of indium antimonide (InSb) for photo-voltaic
applications, we performed first principles calculations using density functional theory (DFT) …
applications, we performed first principles calculations using density functional theory (DFT) …
Electrical properties of InAs1− xSbx and InSb nanowires grown by molecular beam epitaxy
Results of electrical characterization of Au nucleated InAs 1− x Sb x nanowires grown by
molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility …
molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility …
Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors
Semiconductor nanowires have been explored as alternative electronic materials for high
performance device applications exhibiting low power consumption specs. Electrical …
performance device applications exhibiting low power consumption specs. Electrical …
Large-diameter indium antimonide microwire based broadband and robust optical switch
F Lou, X Cui, X Sheng, C Jia, S Zhang, X Wang… - Science China Physics …, 2023 - Springer
Various nanophotonic devices based on semiconductor wires with a diameter of several ten
nanometers have been studied. Nevertheless, studying the optoelectronics properties and …
nanometers have been studied. Nevertheless, studying the optoelectronics properties and …
Synthesis and Photoelectric Properties of Cu2ZnGeS4 and Cu2ZnGeSe4 Single-Crystalline Nanowire Arrays
Cu2ZnGeS4 (CZGS) and Cu2ZnGeSe4 (CZGSe) single crystalline nanowire arrays have
been prepared via a convenient one-step nanoconfined solvothermal approach. The porous …
been prepared via a convenient one-step nanoconfined solvothermal approach. The porous …