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Engineering metallic nanostructures for plasmonics and nanophotonics
Metallic nanostructures now play an important role in many applications. In particular, for the
emerging fields of plasmonics and nanophotonics, the ability to engineer metals on …
emerging fields of plasmonics and nanophotonics, the ability to engineer metals on …
Silicon nanowires for photovoltaic solar energy conversion
KQ Peng, ST Lee - Advanced Materials, 2011 - Wiley Online Library
Semiconductor nanowires are attracting intense interest as a promising material for solar
energy conversion for the new‐generation photovoltaic (PV) technology. In particular, silicon …
energy conversion for the new‐generation photovoltaic (PV) technology. In particular, silicon …
Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension
The memristor, is a promising building block for next-generation non-volatile memory,
artificial neural networks,,–and bio-inspired computing systems,. Organizing small …
artificial neural networks,,–and bio-inspired computing systems,. Organizing small …
Tri-gate devices and methods of fabrication
RS Chau, BS Doyle, J Kavalieros, D Barlage… - US Patent …, 2008 - Google Patents
4,906,589 A 3, 1990 Chao 4,996,574 A 2f1991 Shirasaki et al. 5,124,777 A 6, 1992 Lee
5,338,959 A 8, 1994 Kim et al. 5,346,839 A 9, 1994 Sundaresan................. 438/164 …
5,338,959 A 8, 1994 Kim et al. 5,346,839 A 9, 1994 Sundaresan................. 438/164 …
Method of forming a metal oxide dielectric
JK Brask, BS Doyle, J Kavalleros, M Doczy… - US Patent …, 2008 - Google Patents
(57) ABSTRACT A semiconductor device comprising a semiconductor body having a top
surface and a first and second laterally opposite sidewalls as formed on an insulating …
surface and a first and second laterally opposite sidewalls as formed on an insulating …
Nonplanar transistors with metal gate electrodes
JK Brask, BS Doyle, ML Doczy, RS Chau - US Patent 7,105,390, 2006 - Google Patents
(57) ABSTRACT A semiconductor device comprising a semiconductor body having a top
Surface and a first and second laterally opposite sidewalls as formed on an insulating …
Surface and a first and second laterally opposite sidewalls as formed on an insulating …
Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
SA Hareland, RS Chau, BS Doyle, R Rios… - US Patent …, 2010 - Google Patents
US PATENT DOCUMENTS 6,163,053 A 12/2000 Kawashima 6,165,880 A 12/2000 Yaung
et al. 5, 120,666 A 6, 1992 Gotou........................ 438/164 6,174,820 B1 1/2001 Habermehl et …
et al. 5, 120,666 A 6, 1992 Gotou........................ 438/164 6,174,820 B1 1/2001 Habermehl et …
Turning silicon on its edge [double gate CMOS/FinFET technology]
EJ Nowak, I Aller, T Ludwig, K Kim… - IEEE Circuits and …, 2004 - ieeexplore.ieee.org
Double-gate devices will enable the continuation of CMOS scaling after conventional
scaling has stalled. DGCMOS/FinFET technology offers a tactical solution to the gate …
scaling has stalled. DGCMOS/FinFET technology offers a tactical solution to the gate …
Metal silicides in CMOS technology: Past, present, and future trends
Metal silicides have played an indispensable role in the raped development of
microelectronics since PtSi was first used to improve the rectifying characteristics of diodes …
microelectronics since PtSi was first used to improve the rectifying characteristics of diodes …
Recent progress in simple and cost‐effective top‐down lithography for≈ 10 nm scale nanopatterns: from edge lithography to secondary sputtering lithography
The development of a simple and cost‐effective method for fabricating≈ 10 nm scale
nanopatterns over large areas is an important issue, owing to the performance …
nanopatterns over large areas is an important issue, owing to the performance …