Mechanisms of fluorescence blinking in semiconductor nanocrystal quantum dots

J Tang, RA Marcus - The Journal of chemical physics, 2005‏ - pubs.aip.org
The light-induced spectral diffusion and fluorescence intermittency (blinking) of
semiconductor nanocrystal quantum dots are investigated theoretically using a diffusion …

Optical transitions in quantum ring complexes

T Kuroda, T Mano, T Ochiai, S Sanguinetti… - Physical Review B …, 2005‏ - APS
Making use of a droplet-epitaxial technique, we realize nanometer-sized quantum ring
complexes, consisting of a well-defined inner ring and an outer ring. Electronic structure …

Many-body theory of carrier capture and relaxation in semiconductor quantum-dot lasers

TR Nielsen, P Gartner, F Jahnke - Physical Review B—Condensed Matter and …, 2004‏ - APS
In quantum-dot laser devices containing a quasi-two-dimensional wetting layer, a pump
process initially populates the wetting-layer states. The scattering of carriers from these …

Advanced quantum dot configurations

S Kiravittaya, A Rastelli… - Reports on Progress in …, 2009‏ - iopscience.iop.org
We present an overview on approaches currently employed to fabricate advanced quantum
dot configurations by epitaxial growth. Widely investigated self-assembled quantum dots, ie …

Submicrosecond correlations in photoluminescence from InAs quantum dots

C Santori, D Fattal, J Vučković, GS Solomon, E Waks… - Physical Review B, 2004‏ - APS
Photon correlation measurements reveal memory effects in the optical emission of single
InAs quantum dots with time scales from 10 to 800 ns. With above-band optical excitation, a …

Unified model of droplet epitaxy for compound semiconductor nanostructures: experiments and theory

K Reyes, P Smereka, D Nothern, JM Millunchick… - Physical Review B …, 2013‏ - APS
We present a unified model of compound semiconductor growth based on kinetic Monte
Carlo simulations in tandem with experimental results that can describe and predict the …

Wetting layer and size effects on the nonlinear optical properties of semi oblate and prolate Si0. 7Ge0. 3/Si quantum dots

M Kria, M Farkous, V Prasad, F Dujardin, LM Pérez… - Current Applied …, 2021‏ - Elsevier
Semi oblate and semi prolate are among the most probable self-organized nanostructures
shapes. The optoelectronic properties of such nanostructures are not just manipulated with …

Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy

JG Keizer, J Bocquel, PM Koenraad, T Mano… - Applied Physics …, 2010‏ - pubs.aip.org
In this letter we have performed a structural analysis at the atomic scale of GaAs/AlGaAs
quantum dots grown by droplet epitaxy. The shape, composition, and strain of the quantum …

Homogeneous broadening in quantum dots due to Auger scattering with wetting layer carriers

HH Nilsson, JZ Zhang, I Galbraith - Physical Review B—Condensed Matter and …, 2005‏ - APS
The homogeneous broadening in semiconductor quantum dot (QD) lasers and optical
amplifiers is studied theoretically. Based on a model for the electronic states of the coupled …

Picosecond nonlinear relaxation of photoinjected carriers in a single quantum dot

T Kuroda, S Sanguinetti, M Gurioli, K Watanabe… - Physical Review B, 2002‏ - APS
Photoemission from a single self-organized G a A s/A l 0.3 Ga 0.7 As quantum dot (QD) is
temporally resolved with picosecond time resolution. The emission spectra consisting of the …