Impact of work function variation for enhanced electrostatic control with suppressed ambipolar behavior for dual gate L-TFET
The favorable electrostatic potential and tunneling underneath the overall gate region, which
prevents legitimate source to drain tunneling, controllability over the gate is assisted in …
prevents legitimate source to drain tunneling, controllability over the gate is assisted in …
Impact of temperature on analog/RF, linearity and reliability performance metrics of tunnel FET with ultra-thin source region
In this script, authors affirm a novel structure of tunnel FET in which a lightly doped channel
region completely bounds the ultra-thin finger-like source region to enhance the tunneling …
region completely bounds the ultra-thin finger-like source region to enhance the tunneling …
Tuning electrical properties of amorphous Ga₂O₃ thin films for deep UV phototransistors
In recent years-Ga 2 O 3 thin films and crystals have gained attention as excellent
candidates for transparent and high-power applications due to its wide band gap (4.6–4.9 …
candidates for transparent and high-power applications due to its wide band gap (4.6–4.9 …
Performance analysis of ITCs on analog/RF, linearity and reliability performance metrics of tunnel FET with ultra-thin source region
The generation and accumulation of trap charges at oxide-semiconductor contact is a crucial
point to consider since it affects device performance and reliability. This paper aimed to …
point to consider since it affects device performance and reliability. This paper aimed to …
Assessing the Impact of Drain Underlap Perspective Approach to Investigate DC/RF to Linearity Behavior of L-Shaped TFET
Controllability over the gate is facilitated in vertical TFET formations because of the favorable
electrostatic potential and tunneling under the entire gate region, inhibiting direct source to …
electrostatic potential and tunneling under the entire gate region, inhibiting direct source to …
Performance analysis of hetero gate oxide with work function engineering based SC-TFET with impact of ITCs
DS Yadav, M Kamal - Silicon, 2022 - Springer
This manuscript illustrates the effects of temperature (T) and Interface trap charges (ITCs) on
proposed device (Hetero Gate Oxide-Dual Work function-Step Channel Tunnel Field Effect …
proposed device (Hetero Gate Oxide-Dual Work function-Step Channel Tunnel Field Effect …
Temperature impact on linearity and analog/rf performance metrics of a novel charge plasma tunnel fet
The authors demonstrate a novel Charge-Plasma structure of Tunnel FET in which two
different metal strips are implanted in oxide region to improve overall device's performance …
different metal strips are implanted in oxide region to improve overall device's performance …
Temperature analysis on electrostatics performance parameters of dual metal gate step channel TFET
In this research work, a device structure modification for a doped tunnel field-effect transistor
(TFET) is proposed with gate engineering at the gate electrode to overcome the limitations of …
(TFET) is proposed with gate engineering at the gate electrode to overcome the limitations of …
Effects of linearity and reliability analysis for hgo-dw-sctfet with temperature variation for high frequency application
M Kamal, DS Yadav - Silicon, 2021 - Springer
This paper examines the effects of temperature variation on Hetero Gate Oxide Dual Work
Function Step Channel Tunnel Field-Effect Transistor (HGO-DW-SCTFET). For different …
Function Step Channel Tunnel Field-Effect Transistor (HGO-DW-SCTFET). For different …
Assessment of temperature and ITCs on single gate L-shaped tunnel FET for low power high frequency application
P Singh, DS Yadav - Engineering Research Express, 2024 - iopscience.iop.org
In a vertical TFET structure, controllability over the gate is enhanced because of the
favorable electrostatic potential and tunneling under the entire gate region by preventing the …
favorable electrostatic potential and tunneling under the entire gate region by preventing the …