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GaN structures
DM Kinzer - US Patent 9,960,154, 2018 - Google Patents
(57) ABSTRACT A semiconductor device is disclosed. The device includes a substrate
including Gan, a two dimensional electron gas (2DEG) inducing layer on the substrate, and …
including Gan, a two dimensional electron gas (2DEG) inducing layer on the substrate, and …
Compound semiconductor device and method of manufacturing the same
S Akiyama, T Hosoda, M Miyamoto - US Patent App. 13/731,759, 2013 - Google Patents
Assignee: FUJITSUSEMICONDUCTOR LIMITED, Yokohama-shi (JP) An embodiment of a
compound semiconductor device includes: an electron transit layer, an electron Supply layer …
compound semiconductor device includes: an electron transit layer, an electron Supply layer …
Half bridge driver circuits
DM Kinzer, S Sharma, J Zhang - US Patent 9,960,764, 2018 - Google Patents
GaN-based half bridge power conversion circuits employ control, support and logic functions
that are monolithically integrated on the same devices as the power transistors. In some …
that are monolithically integrated on the same devices as the power transistors. In some …
Half bridge power conversion circuits using GaN devices
DM Kinzer, S Sharma, JJ Zhang - US Patent 9,859,732, 2018 - Google Patents
GaN-based half bridge power conversion circuits employ control, support and logic functions
that are monolithically integrated on the same devices as the power transistors. In some …
that are monolithically integrated on the same devices as the power transistors. In some …
Pulsed level shift and inverter circuits for GaN devices
DM Kinzer, S Sharma, JJ Zhang - US Patent 10,135,275, 2018 - Google Patents
GaN-based half bridge power conversion circuits employ control, support and logic functions
that are monolithically integrated on the same devices as the power transistors. In some …
that are monolithically integrated on the same devices as the power transistors. In some …
Half bridge power conversion circuits using GaN devices
DM Kinzer, S Sharma, JJ Zhang - US Patent 9,685,869, 2017 - Google Patents
US9685869B1 - Half bridge power conversion circuits using GaN devices - Google Patents
US9685869B1 - Half bridge power conversion circuits using GaN devices - Google Patents …
US9685869B1 - Half bridge power conversion circuits using GaN devices - Google Patents …
Half bridge driver circuits
DM Kinzer, S Sharma, J Zhang, M Giandalia… - US Patent …, 2017 - Google Patents
(57) ABSTRACT A half bridge GaN circuit is disclosed. The circuit includes a low side circuit,
which has a low side switch, a low side switch driver configured to drive the low side switch …
which has a low side switch, a low side switch driver configured to drive the low side switch …
GaN circuit drivers for GaN circuit loads
DM Kinzer, S Sharma, J Zhang - US Patent 10,170,922, 2019 - Google Patents
An electronic circuit is disclosed. The electronic circuit includes a GaN substrate, a first
power supply node on the substrate, an output node, a signal node, and an output …
power supply node on the substrate, an output node, a signal node, and an output …
GaN circuit drivers for GaN circuit loads
DM Kinzer, S Sharma, J Zhang - US Patent 10,396,579, 2019 - Google Patents
An electronic circuit is disclosed. The electronic circuit includes a GaN substrate, a first
power supply node on the substrate, an output node, a signal node, and an output …
power supply node on the substrate, an output node, a signal node, and an output …
Half bridge power conversion circuits using GaN devices
DM Kinzer, S Sharma, J Zhang - US Patent 10,277,048, 2019 - Google Patents
GaN-based half bridge power conversion circuits employ control, support and logic functions
that are monolithically integrated on the same devices as the power transistors. In some …
that are monolithically integrated on the same devices as the power transistors. In some …