Recent advances and future perspectives of bismuthene: from preparation to applications

Z Lu, D Yu, Y Hong, G Ma, F Ru, T Ge, G **, L Qin… - Materials Today, 2024 - Elsevier
Bismuthene, an emerging two-dimensional monoelemental material as a good candidate of
the room-temperature topological insulator, has attracted considerable attention due to its …

Unusual Electronic States and Superconducting Proximity Effect of Bi Films Modulated by a NbSe2 Substrate

L Peng, J Qiao, JJ **an, Y Pan, W Ji, W Zhang, YS Fu - ACS nano, 2019 - ACS Publications
Heterostructures of two-dimensional layered materials can be functionalized with exotic
phenomena that are unpresented with each constituting component. The interface effect …

Quantum size effects, multiple dirac cones, and edge states in Ultrathin Bi (110) films

AK Kundu, G Gu, T Valla - ACS Applied Materials & Interfaces, 2021 - ACS Publications
The presence of inherently strong spin–orbit coupling in bismuth, its unique layer-dependent
band topology and high carrier mobility make it an interesting system for both fundamental …

Scanning tunneling microscopy observation of the hinge states of bismuth nanocrystals

T Zhang, S Vlaic, S Pons, D Roditchev, V Sheina… - Physical Review B, 2023 - APS
The recent application of topological quantum chemistry to rhombohedral bismuth
established the nontrivial band structure of this material. This is a second-order topological …

Robust zero energy modes on superconducting bismuth islands deposited on Fe (Te, Se)

X Chen, M Chen, W Duan, H Yang, HH Wen - Nano Letters, 2020 - ACS Publications
Topological superconductivity is one of the frontier research directions in condensed matter
physics. One of the unique elementary excitations in topological superconducting state is the …

Revealing Higher-Order Topological Bulk-boundary Correspondence in Bismuth Crystal with Spin-helical Hinge State Loop and Proximity Superconductivity

DM Zhao, Y Zhong, T Yuan, HT Wang, TX Jiang… - arxiv preprint arxiv …, 2025 - arxiv.org
Topological materials are typically characterized by gapless boundary states originated from
nontrivial bulk band topology, known as topological bulk-boundary correspondence …

Engineering a topological quantum dot device through planar magnetization in bismuthene

J Zhou, T Zhou, S Cheng, H Jiang, Z Yang - Physical Review B, 2019 - APS
The discovery of quantum spin Hall materials with huge bulk gaps in experiment, such as
bismuthene, provides a versatile platform for topological devices. We propose a topological …

Comparative growth study of ultrathin Bi films on clean and oxygen-reconstructed Nb (110)

R Boshuis, A Odobesko, F Friedrich, J Jung… - Physical Review …, 2021 - APS
We present a detailed study of the growth of Bi films on superconducting Nb (110) substrates
in dependence on the Bi coverages and the Nb surface quality. We find that Bi grows in a …

Engineering topological quantum dot through planar magnetization in bismuthene

J Zhou, T Zhou, S Cheng, H Jiang, Z Yang - arxiv preprint arxiv …, 2018 - arxiv.org
The discovery of quantum spin Hall materials with huge bulk gaps in experiment, such as
bismuthene, provides a versatile platform for topological devices. We propose a topological …

α-Al3O3 (11-20) 面における Nb (110) 薄膜の成長

小林俊博, 一ノ倉聖, **原徹 - 日本表面真空学会学術講演会要旨集 …, 2019 - jstage.jst.go.jp
抄録 Nb (110) 上に Bi を成長させると,(111),(110),(114) といった様々な方位の結晶表面を作る
ことができる. また, Nb が超伝導物質であることから超伝導接合の系としても興味深い …