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Recent advances and future perspectives of bismuthene: from preparation to applications
Z Lu, D Yu, Y Hong, G Ma, F Ru, T Ge, G **, L Qin… - Materials Today, 2024 - Elsevier
Bismuthene, an emerging two-dimensional monoelemental material as a good candidate of
the room-temperature topological insulator, has attracted considerable attention due to its …
the room-temperature topological insulator, has attracted considerable attention due to its …
Unusual Electronic States and Superconducting Proximity Effect of Bi Films Modulated by a NbSe2 Substrate
Heterostructures of two-dimensional layered materials can be functionalized with exotic
phenomena that are unpresented with each constituting component. The interface effect …
phenomena that are unpresented with each constituting component. The interface effect …
Quantum size effects, multiple dirac cones, and edge states in Ultrathin Bi (110) films
The presence of inherently strong spin–orbit coupling in bismuth, its unique layer-dependent
band topology and high carrier mobility make it an interesting system for both fundamental …
band topology and high carrier mobility make it an interesting system for both fundamental …
Scanning tunneling microscopy observation of the hinge states of bismuth nanocrystals
The recent application of topological quantum chemistry to rhombohedral bismuth
established the nontrivial band structure of this material. This is a second-order topological …
established the nontrivial band structure of this material. This is a second-order topological …
Robust zero energy modes on superconducting bismuth islands deposited on Fe (Te, Se)
Topological superconductivity is one of the frontier research directions in condensed matter
physics. One of the unique elementary excitations in topological superconducting state is the …
physics. One of the unique elementary excitations in topological superconducting state is the …
Revealing Higher-Order Topological Bulk-boundary Correspondence in Bismuth Crystal with Spin-helical Hinge State Loop and Proximity Superconductivity
DM Zhao, Y Zhong, T Yuan, HT Wang, TX Jiang… - arxiv preprint arxiv …, 2025 - arxiv.org
Topological materials are typically characterized by gapless boundary states originated from
nontrivial bulk band topology, known as topological bulk-boundary correspondence …
nontrivial bulk band topology, known as topological bulk-boundary correspondence …
Engineering a topological quantum dot device through planar magnetization in bismuthene
The discovery of quantum spin Hall materials with huge bulk gaps in experiment, such as
bismuthene, provides a versatile platform for topological devices. We propose a topological …
bismuthene, provides a versatile platform for topological devices. We propose a topological …
Comparative growth study of ultrathin Bi films on clean and oxygen-reconstructed Nb (110)
R Boshuis, A Odobesko, F Friedrich, J Jung… - Physical Review …, 2021 - APS
We present a detailed study of the growth of Bi films on superconducting Nb (110) substrates
in dependence on the Bi coverages and the Nb surface quality. We find that Bi grows in a …
in dependence on the Bi coverages and the Nb surface quality. We find that Bi grows in a …
Engineering topological quantum dot through planar magnetization in bismuthene
The discovery of quantum spin Hall materials with huge bulk gaps in experiment, such as
bismuthene, provides a versatile platform for topological devices. We propose a topological …
bismuthene, provides a versatile platform for topological devices. We propose a topological …
α-Al3O3 (11-20) 面における Nb (110) 薄膜の成長
小林俊博, 一ノ倉聖, **原徹 - 日本表面真空学会学術講演会要旨集 …, 2019 - jstage.jst.go.jp
抄録 Nb (110) 上に Bi を成長させると,(111),(110),(114) といった様々な方位の結晶表面を作る
ことができる. また, Nb が超伝導物質であることから超伝導接合の系としても興味深い …
ことができる. また, Nb が超伝導物質であることから超伝導接合の系としても興味深い …