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Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
Gallium nitride vertical power devices on foreign substrates: A review and outlook
Vertical gallium nitride (GaN) power devices have attracted increased attention due to their
superior high-voltage and high-current capacity as well as easier thermal management than …
superior high-voltage and high-current capacity as well as easier thermal management than …
A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …
switching speeds, leading to rampant research in the field of next generation wide bandgap …
“Leaky Dielectric” Model for the Suppression of Dynamic in Carbon-Doped AlGaN/GaN HEMTs
GaN-on-Si power switching transistors that use carbon-doped epitaxy are highly vulnerable
to dynamic R ON dispersion, leading to reduced switching efficiency. In this paper, we …
to dynamic R ON dispersion, leading to reduced switching efficiency. In this paper, we …
1.2-kV vertical GaN fin-JFETs: High-temperature characteristics and avalanche capability
This work describes the high-temperature performance and avalanche capability of normally-
off 1.2-K V-CLASS vertical gallium nitride (GaN) fin-channel junction field-effect transistors …
off 1.2-K V-CLASS vertical gallium nitride (GaN) fin-channel junction field-effect transistors …
GaN FinFETs and trigate devices for power and RF applications: Review and perspective
Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …
Large-area 1.2-kV GaN vertical power FinFETs with a record switching figure of merit
This letter presents the first experimental study on capacitances, charges, and power-
switching figure of merits (FOM) for a large-area vertical GaN power transistor. A 1.2-kV, 5-A …
switching figure of merits (FOM) for a large-area vertical GaN power transistor. A 1.2-kV, 5-A …
Vertical GaN junction barrier Schottky rectifiers by selective ion implantation
This letter demonstrates vertical GaN junction barrier Schottky (JBS) rectifiers fabricated with
novel ion implantation techniques. We used two different methods to form the lateral pn grids …
novel ion implantation techniques. We used two different methods to form the lateral pn grids …
Materials and processing issues in vertical GaN power electronics
Silicon-based power devices are reaching their fundamental performance limit. The use of
wide-bandgap semiconductors with superior material properties over silicon offers the …
wide-bandgap semiconductors with superior material properties over silicon offers the …
(Ultra) wide-bandgap vertical power FinFETs
FinFET is the backbone device technology for CMOS electronics at deeply scaled
technology nodes per Moore's law. Recently, the FinFET concept has been leveraged to …
technology nodes per Moore's law. Recently, the FinFET concept has been leveraged to …