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A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer
S Qu, L Gao, J Wang, H Chen, J Zhang - Micromachines, 2024 - mdpi.com
The global demand for radio frequency (RF) modules and components has grown
exponentially in recent decades. RF switches are the essential unit in RF front-end and …
exponentially in recent decades. RF switches are the essential unit in RF front-end and …
Thermal Transport in Chalcogenide‐Based Phase Change Materials: A Journey from Fundamental Physics to Device Engineering
Advancements in nanofabrication processes have propelled nonvolatile phase change
materials (PCMs) beyond storage‐class applications. They are now making headway in …
materials (PCMs) beyond storage‐class applications. They are now making headway in …
Fast crystallization of the phase change compound GeTe by large-scale molecular dynamics simulations
Phase change materials are of great interest as active layers in rewritable optical disks and
novel electronic nonvolatile memories. These applications rest on a fast and reversible …
novel electronic nonvolatile memories. These applications rest on a fast and reversible …
Analyzing and driving cluster formation in atomistic simulations
In this paper a set of computational tools for identifying the phases contained in a system
composed of atoms or molecules is introduced. The method is rooted in graph theory and …
composed of atoms or molecules is introduced. The method is rooted in graph theory and …
First-principles study of liquid and amorphous
Based on ab initio molecular-dynamics simulations, we generated models of liquid and
amorphous Sb 2 Te 3 of interest for applications as phase change material in optical and …
amorphous Sb 2 Te 3 of interest for applications as phase change material in optical and …
12.5 THz Fco GeTe inline phase-change switch technology for reconfigurable RF and switching applications
N El-Hinnawy, P Borodulin, EB Jones… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
Improvements to the GeTe inline phase-change switch (IPCS) technology have resulted in a
record-performing radio-frequency (RF) switch. An ON-state resistance of 0.9 Ω (0.027 Ω …
record-performing radio-frequency (RF) switch. An ON-state resistance of 0.9 Ω (0.027 Ω …
Breakdown of Stokes–Einstein relation in the supercooled liquid state of phase change materials
The application of amorphous chalcogenide alloys as data‐storage media relies on their
ability to undergo an extremely fast (10–100 ns) crystallization once heated at sufficiently …
ability to undergo an extremely fast (10–100 ns) crystallization once heated at sufficiently …
Realization of multilevel states in phase‐change thin films by fast laser pulse irradiation
X Sun, A Lotnyk, M Ehrhardt, JW Gerlach… - Advanced Optical …, 2017 - Wiley Online Library
Multilevel storage techniques are promising for increasing storage density and for reducing
energy consumption in the application of phase‐change materials based memory devices …
energy consumption in the application of phase‐change materials based memory devices …
Dynamical heterogeneity in the supercooled liquid state of the phase change material GeTe
A contending technology for nonvolatile memories of the next generation is based on a
remarkable property of chalcogenide alloys known as phase change materials, namely their …
remarkable property of chalcogenide alloys known as phase change materials, namely their …
[HTML][HTML] Low-loss latching microwave switch using thermally pulsed non-volatile chalcogenide phase change materials
N El-Hinnawy, P Borodulin, BP Wagner… - Applied Physics …, 2014 - pubs.aip.org
A high performance RF (radio-frequency) switch based on the phase change effect in
germanium-telluride (GeTe) is described. Thermal pulses applied to a separate independent …
germanium-telluride (GeTe) is described. Thermal pulses applied to a separate independent …