A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

S Qu, L Gao, J Wang, H Chen, J Zhang - Micromachines, 2024 - mdpi.com
The global demand for radio frequency (RF) modules and components has grown
exponentially in recent decades. RF switches are the essential unit in RF front-end and …

Thermal Transport in Chalcogenide‐Based Phase Change Materials: A Journey from Fundamental Physics to Device Engineering

K Aryana, CC Popescu, H Sun, K Aryana… - Advanced …, 2025 - Wiley Online Library
Advancements in nanofabrication processes have propelled nonvolatile phase change
materials (PCMs) beyond storage‐class applications. They are now making headway in …

Fast crystallization of the phase change compound GeTe by large-scale molecular dynamics simulations

GC Sosso, G Miceli, S Caravati, F Giberti… - The journal of …, 2013 - ACS Publications
Phase change materials are of great interest as active layers in rewritable optical disks and
novel electronic nonvolatile memories. These applications rest on a fast and reversible …

Analyzing and driving cluster formation in atomistic simulations

GA Tribello, F Giberti, GC Sosso… - Journal of chemical …, 2017 - ACS Publications
In this paper a set of computational tools for identifying the phases contained in a system
composed of atoms or molecules is introduced. The method is rooted in graph theory and …

First-principles study of liquid and amorphous

S Caravati, M Bernasconi, M Parrinello - Physical Review B—Condensed …, 2010 - APS
Based on ab initio molecular-dynamics simulations, we generated models of liquid and
amorphous Sb 2 Te 3 of interest for applications as phase change material in optical and …

12.5 THz Fco GeTe inline phase-change switch technology for reconfigurable RF and switching applications

N El-Hinnawy, P Borodulin, EB Jones… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
Improvements to the GeTe inline phase-change switch (IPCS) technology have resulted in a
record-performing radio-frequency (RF) switch. An ON-state resistance of 0.9 Ω (0.027 Ω …

Breakdown of Stokes–Einstein relation in the supercooled liquid state of phase change materials

GC Sosso, J Behler, M Bernasconi - physica status solidi (b), 2012 - Wiley Online Library
The application of amorphous chalcogenide alloys as data‐storage media relies on their
ability to undergo an extremely fast (10–100 ns) crystallization once heated at sufficiently …

Realization of multilevel states in phase‐change thin films by fast laser pulse irradiation

X Sun, A Lotnyk, M Ehrhardt, JW Gerlach… - Advanced Optical …, 2017 - Wiley Online Library
Multilevel storage techniques are promising for increasing storage density and for reducing
energy consumption in the application of phase‐change materials based memory devices …

Dynamical heterogeneity in the supercooled liquid state of the phase change material GeTe

GC Sosso, J Colombo, J Behler… - The Journal of …, 2014 - ACS Publications
A contending technology for nonvolatile memories of the next generation is based on a
remarkable property of chalcogenide alloys known as phase change materials, namely their …

[HTML][HTML] Low-loss latching microwave switch using thermally pulsed non-volatile chalcogenide phase change materials

N El-Hinnawy, P Borodulin, BP Wagner… - Applied Physics …, 2014 - pubs.aip.org
A high performance RF (radio-frequency) switch based on the phase change effect in
germanium-telluride (GeTe) is described. Thermal pulses applied to a separate independent …