▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …

Semiconductor quantum-dot nanostructures are interesting objects for fundamental as well
as practical reasons. Fundamentally, they can form the basis of systems in which to study the …

This review seeks to extend the scope of both the experimental and theoreticalwork carried
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …

Nanoscale science and technology is a young and burgeoning field that encompasses
nearly every discipline of science and engineering. With rapid advances in areas such as …

This work presents a theory of optical signal amplification and processing by quantum-dot
semiconductor optical amplifiers (SOA's) based on the density matrix equations to treat …

Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers
are explained by a comprehensive numerical model. The QD excited state carriers are found …

We report on calculations of capture and relaxation of carriers in quantum dots, specifically,
InAs/GaAs self-assembled dots. We point out that the phonon-assisted carrier capture …

This paper presents a theory and simulation of quantum-dot semiconductor optical
amplifiers (SOAs) for high-bit-rate optical signal processing. The theory includes spatial …

Self-organized In (Ga) As/Ga (Al) As quantum dots have emerged as useful nanostructures
that can be epitaxially grown and incorporated in the active region of devices. The near …

A theory for pulse amplification and saturation in quantum dot (QD) semiconductor optical
amplifiers (SOAs) is developed. In particular, the maximum bit rate at which a data stream of …