Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-based solar cells
III-nitride InGaN material is an ideal candidate for the fabrication of high performance
photovoltaic (PV) solar cells, especially for high-temperature applications. Over the past …
photovoltaic (PV) solar cells, especially for high-temperature applications. Over the past …
Quantum well solar cells: principles, recent progress, and potential
Quantum well solar cells, as a promising approach for next-generation photovoltaic
technology, have received great attention in the last few years. Recent developments in …
technology, have received great attention in the last few years. Recent developments in …
Evaluation of Photoconversion Efficiency in InGaN/GaN MQW Solar Cells at High Temperatures
HS Shan, MH Li, XY Li, CK Li, SW Liu… - ACS Applied Energy …, 2023 - ACS Publications
The photoelectric conversion efficiency of InGaN/GaN multiple quantum well (MQW) solar
cells has been investigated at high temperatures and the study revealed that their average …
cells has been investigated at high temperatures and the study revealed that their average …
High-temperature polarization-free III-nitride solar cells with self-cooling effects
High-temperature photovoltaics (PV) for terrestrial and extraterrestrial applications have
presented demanding challenges for current solar cell materials, such as Si, III–V AlGaInP …
presented demanding challenges for current solar cell materials, such as Si, III–V AlGaInP …
InGaN/GaN multi‐quantum‐well solar cells under high solar concentration and elevated temperatures for hybrid solar thermal‐photovoltaic power plants
Hybrid solar electricity generation combines the high efficiency of photovoltaics (PVs) with
the dispatchability of solar thermal power plants. Recent thermodynamic analyses have …
the dispatchability of solar thermal power plants. Recent thermodynamic analyses have …
Optical wireless communications with InGaN multiple-quantum-well photodiodes grown with the prestrained superlattice interlayer for light detection
InGaN multiple-quantum-well photodiodes (InGaN MQW PDs) grown with an underlying
superlattice (SL) are proposed for light detection in optical wireless communications …
superlattice (SL) are proposed for light detection in optical wireless communications …
High-Efficiency InGaN Photo Cell Irradiated by 532 nm Laser with AlGaN Electron Blocking Layer
HS Shan, SW Liu, N Wang, XY Li - ECS Journal of Solid State …, 2023 - iopscience.iop.org
In this paper, a high-efficiency InGaN photo cell irradiated by 532 nm laser (at green
wavelength) with AlGaN electron blocking layer (EBL) is proposed based on the blue-green …
wavelength) with AlGaN electron blocking layer (EBL) is proposed based on the blue-green …
Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells
Motivated by possible application of InGaN/GaN multi-quantum well solar cells in hybrid
concentrated photovoltaic/solar thermal power conversion systems, we have analyzed the …
concentrated photovoltaic/solar thermal power conversion systems, we have analyzed the …
Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation
GaN-based solar cells with InGaN multiple quantum wells (MQWs) are promising devices for
application in space environment, concentrator solar systems, wireless power transmission …
application in space environment, concentrator solar systems, wireless power transmission …
[HTML][HTML] Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling
InGaN-based multi-quantum well (MQW) solar cells are promising devices for photovoltaics
(eg, for tandem solar cells and concentrator systems), space applications, and wireless …
(eg, for tandem solar cells and concentrator systems), space applications, and wireless …