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Functionalized Graphene via a One-Pot Reaction Enabling Exact Pore Sizes, Modifiable Pore Functionalization, and Precision Do**
Functionalizing graphene with exact pore size, specific functional groups, and precision
do** poses many significant challenges. Current methods lack precision and produce …
do** poses many significant challenges. Current methods lack precision and produce …
Silicene transistors—A review
RG Quhe, YY Wang, J Lü - Chinese Physics B, 2015 - iopscience.iop.org
Free standing silicene is a two-dimensional silicon monolayer with a buckled honeycomb
lattice and a Dirac band structure. Ever since its first successful synthesis in the laboratory …
lattice and a Dirac band structure. Ever since its first successful synthesis in the laboratory …
Energy gap closure of crystalline molecular hydrogen with pressure
We study the gap closure with pressure of crystalline molecular hydrogen. The gaps are
obtained from grand-canonical quantum Monte Carlo methods properly extended to …
obtained from grand-canonical quantum Monte Carlo methods properly extended to …
Nature of the metallization transition in solid hydrogen
We present an accurate study of the static-nucleus electronic energy band gap of solid
molecular hydrogen at high pressure. The excitonic and quasiparticle gaps of the C 2/c, P c …
molecular hydrogen at high pressure. The excitonic and quasiparticle gaps of the C 2/c, P c …
Impact of further thermal reduction on few-layer reduced graphene oxide film and its np transition for gas sensing
Y Zhou, X Lin, Y Huang, Y Guo, C Gao, G ** is one way of introducing an electronic bandgap in otherwise
semimetallic graphene. A small change in dopant arrangement can convert graphene from a …
semimetallic graphene. A small change in dopant arrangement can convert graphene from a …
Perforation-rotation based approach for band gap creation and enlargement in low porosity architected materials
X Tian, W Chen, R Gao, S Liu, J Wang - Composite Structures, 2020 - Elsevier
Artificially designed Perforated architected materials (PAMs) have attracted growing
attention in recent years due to its relatively simple fabrication process and unusual physical …
attention in recent years due to its relatively simple fabrication process and unusual physical …
Effect of surface do** on the band structure of graphene: a DFT study
Various techniques, like do**, vacancy creation, strain engineering are tried to open a gap
in the bandstructure of graphene and in some cases the gap has opened up. However …
in the bandstructure of graphene and in some cases the gap has opened up. However …
Graphene/SiC (0001) interface structures induced by Si intercalation and their influence on electronic properties of graphene
A Visikovskiy, S Kimoto, T Kajiwara, M Yoshimura… - Physical Review B, 2016 - APS
Epitaxial graphene growth on SiC surfaces is considered advantageous in terms of device
application. However, the first graphitic layer on SiC transforms to a buffer layer because of …
application. However, the first graphitic layer on SiC transforms to a buffer layer because of …