Functionalized Graphene via a One-Pot Reaction Enabling Exact Pore Sizes, Modifiable Pore Functionalization, and Precision Do**

K Coe-Sessions, AE Davies, B Dhokale… - Journal of the …, 2024 - ACS Publications
Functionalizing graphene with exact pore size, specific functional groups, and precision
do** poses many significant challenges. Current methods lack precision and produce …

Silicene transistors—A review

RG Quhe, YY Wang, J Lü - Chinese Physics B, 2015 - iopscience.iop.org
Free standing silicene is a two-dimensional silicon monolayer with a buckled honeycomb
lattice and a Dirac band structure. Ever since its first successful synthesis in the laboratory …

Energy gap closure of crystalline molecular hydrogen with pressure

V Gorelov, M Holzmann, DM Ceperley, C Pierleoni - Physical review letters, 2020 - APS
We study the gap closure with pressure of crystalline molecular hydrogen. The gaps are
obtained from grand-canonical quantum Monte Carlo methods properly extended to …

Nature of the metallization transition in solid hydrogen

S Azadi, ND Drummond, WMC Foulkes - Physical Review B, 2017 - APS
We present an accurate study of the static-nucleus electronic energy band gap of solid
molecular hydrogen at high pressure. The excitonic and quasiparticle gaps of the C 2/c, P c …

Impact of further thermal reduction on few-layer reduced graphene oxide film and its np transition for gas sensing

Y Zhou, X Lin, Y Huang, Y Guo, C Gao, G ** is one way of introducing an electronic bandgap in otherwise
semimetallic graphene. A small change in dopant arrangement can convert graphene from a …

Perforation-rotation based approach for band gap creation and enlargement in low porosity architected materials

X Tian, W Chen, R Gao, S Liu, J Wang - Composite Structures, 2020 - Elsevier
Artificially designed Perforated architected materials (PAMs) have attracted growing
attention in recent years due to its relatively simple fabrication process and unusual physical …

Effect of surface do** on the band structure of graphene: a DFT study

K Iyakutti, EM Kumar, I Lakshmi, R Thapa… - Journal of Materials …, 2016 - Springer
Various techniques, like do**, vacancy creation, strain engineering are tried to open a gap
in the bandstructure of graphene and in some cases the gap has opened up. However …

Graphene/SiC (0001) interface structures induced by Si intercalation and their influence on electronic properties of graphene

A Visikovskiy, S Kimoto, T Kajiwara, M Yoshimura… - Physical Review B, 2016 - APS
Epitaxial graphene growth on SiC surfaces is considered advantageous in terms of device
application. However, the first graphitic layer on SiC transforms to a buffer layer because of …