Recent progress of non-cadmium and organic quantum dots for optoelectronic applications with a focus on photodetector devices
Quantum dots (QDs) are zero-dimensional (0D) nanomaterials with charge confinement in
all directions that significantly impact various applications. Metal-free organic quantum dots …
all directions that significantly impact various applications. Metal-free organic quantum dots …
Bismide-nitride alloys: Promising for efficient light emitting devices in the near-and mid-infrared
SJ Sweeney, SR ** - Journal of applied physics, 2013 - pubs.aip.org
GaAsBiN is a potentially interesting alloy which may be exploited in near-and mid-infrared
photonic devices. Here we present the predicted band parameters such as band gap (E g) …
photonic devices. Here we present the predicted band parameters such as band gap (E g) …
1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
We compare InAlAs/GaAs and InGaAs/GaAs strained-layer superlattices (SLSs) as
dislocation filter layers for 1.3-μm InAs/GaAs quantum-dot laser structures directly grown on …
dislocation filter layers for 1.3-μm InAs/GaAs quantum-dot laser structures directly grown on …
Progress toward III–V bismide alloys for near-and midinfrared laser diodes
Bismuth-containing III-V alloys open-up a range of possibilities for practical applications in
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …
[BOOK][B] Reliability and radiation effects in compound semiconductors
AH Johnston - 2010 - books.google.com
This book focuses on reliability and radiation effects in compound semiconductors, which
have evolved rapidly during the last 15 years. It starts with first principles, and shows how …
have evolved rapidly during the last 15 years. It starts with first principles, and shows how …
Degradation of 1.3 μm InAs quantum-dot laser diodes: Impact of dislocation density and number of quantum dot layers
This paper investigates the impact of dislocation density and active layer structure on the
degradation mechanisms of 1.3 μm InAs Quantum Dot (QD) lasers for silicon photonics. We …
degradation mechanisms of 1.3 μm InAs Quantum Dot (QD) lasers for silicon photonics. We …
GaAs-based quantum dot lasers
MT Crowley, NA Naderi, H Su, F Grillot… - Semiconductors and …, 2012 - Elsevier
The unique optical properties of quantum dot semiconductors have brought about significant
new capabilities in light-emitting devices fabricated from these materials. In particular, the …
new capabilities in light-emitting devices fabricated from these materials. In particular, the …
GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures
S Chen, W Li, Z Zhang, D Childs, K Zhou… - Nanoscale Research …, 2015 - Springer
A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid
quantum well (QW)/quantum dot (QD) active element is reported and is assessed with …
quantum well (QW)/quantum dot (QD) active element is reported and is assessed with …
Characterization and Modeling of Broad Spectrum InAs–GaAs Quantum-Dot Superluminescent Diodes Emitting at 1.2–1.3 m
High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-mu m region
are demonstrated using InAs-GaAs quantum dots (QDs). The highest output powers of~ 30 …
are demonstrated using InAs-GaAs quantum dots (QDs). The highest output powers of~ 30 …
Carrier recombination properties of low-threshold 1.3 μm quantum dot lasers on silicon
CR Fitch, A Baltušis, IP Marko, D Jung… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
On-chip lasers are a key component for the realization of silicon photonics. The performance
of silicon-based quantum dot (QD) devices is approaching equivalent QDs on native …
of silicon-based quantum dot (QD) devices is approaching equivalent QDs on native …