Zinc tin nitride (ZnSnN 2) is one of the emerging ternary nitride semiconductors considered
for photovoltaic device applications due to its attractive and tunable material properties and …

Nitride materials feature strong chemical bonding character that leads to unique crystal
structures, but many ternary nitride chemical spaces remain experimentally unexplored. The …

ZnGeN 2 is sought as a semiconductor with comparable lattice constant to GaN and tunable
band gap for integration in optoelectronic devices. Configurational disorder on the cation …

Ternary nitride MgSnN 2 is a promising candidate to fill the “green gap” of nitride-based light-
emitting diodes. The coexistence of two different valence cations offers a unique tunability …

Novel ternary nitride semiconductor MgSnN2 was synthesized using the metathesis reaction
under high pressure (P= 5.5 GPa/T= 850° C/1 h). MgSnN2 obtained in this study showed a …

We have studied the disordered rocksalt, orthorhombic, and disordered wurtzite phases of
the ternary nitride semiconductor MgSnN 2 by first-principles methods using density …

Herein, wurtzite-type MgSnN2–ZnSnN2 alloys (Mg x Zn1–x SnN2) are proposed as earth-
abundant and band gap-tunable semiconductors with fundamental band gaps in the range …

BAs is a III–V semiconductor with ultra-high thermal conductivity, but many of its electronic
properties are unknown. This work applies predictive atomistic calculations to investigate the …

Investigations on II-Sn-N 2 (II= Mg, Ca) have been started very recently compared to the
intense research of Zn-IV-N 2 (IV= Si, Ge, Sn). In this work, we study the phase stability of …

The thin-film synthesis of high-pressure phases in inorganic compounds remains a
challenge. The synthesis of high-pressure phases in thin-film form opens potential …