Recent developments in perpendicular magnetic anisotropy thin films for data storage applications

B Tudu, A Tiwari - Vacuum, 2017 - Elsevier
The incessant demand for higher density, faster access time and lower power consuming
memory devices such as random access memories have driven tremendous research and …

Modulation of heavy metal/ferromagnetic metal interface for high‐performance spintronic devices

S Peng, D Zhu, J Zhou, B Zhang, A Cao… - Advanced Electronic …, 2019 - Wiley Online Library
Spintronic devices such as magnetic tunnel junctions and skyrmions have attracted
considerable attention due to features such as nonvolatility, high scalability, low power, and …

Ultrastrong to nearly deep-strong magnon-magnon coupling with a high degree of freedom in synthetic antiferromagnets

Y Wang, Y Zhang, C Li, J Wei, B He, H Xu, J **a… - Nature …, 2024 - nature.com
Ultrastrong and deep-strong coupling are two coupling regimes rich in intriguing physical
phenomena. Recently, hybrid magnonic systems have emerged as promising candidates for …

Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy

L You, OJ Lee, D Bhowmik, D Labanowski… - Proceedings of the …, 2015 - pnas.org
Spin orbit torque (SOT) provides an efficient way to significantly reduce the current required
for switching nanomagnets. However, SOT generated by an in-plane current cannot …

Mutual control of coherent spin waves and magnetic domain walls in a magnonic device

J Han, P Zhang, JT Hou, SA Siddiqui, L Liu - Science, 2019 - science.org
The successful implementation of spin-wave devices requires efficient modulation of spin-
wave propagation. Using cobalt/nickel multilayer films, we experimentally demonstrate that …

Ultrafast spin-transfer torque driven by femtosecond pulsed-laser excitation

AJ Schellekens, KC Kuiper, R De Wit… - Nature …, 2014 - nature.com
Spin currents have an important role in many proposed spintronic devices, as they govern
the switching process of magnetic bits in random access memories or drive domain wall …

Field-Free Current-Induced Switching of L10- Using Interlayer Exchange Coupling for Neuromorphic Computing

K Dong, Z Guo, YY Jiao, R Li, C Sun, Y Tao, S Zhang… - Physical Review …, 2023 - APS
L 1 0-phase Fe Pt is well known for its unusually robust perpendicular magnetic anisotropy
(PMA) properties arising from strong conduction-electron spin-orbit coupling (SOC) with the …

Co/Ni multilayers for spintronics: High spin polarization and tunable magnetic anisotropy

S Andrieu, T Hauet, M Gottwald, A Rajanikanth… - Physical review …, 2018 - APS
In this paper we analyze, in detail, the magnetic properties of (Co/Ni) multilayers, a widely
used system for spintronics devices. We use spin-polarized photoemission spectroscopy …

Origin of perpendicular magnetic anisotropy in Co/Ni multilayers

M Arora, R Hübner, D Süss, B Heinrich, E Girt - Physical Review B, 2017 - APS
We studied the variation in perpendicular magnetic anisotropy of (111) textured
Au/N×[Co/Ni]/Au films as a function of the number of bilayer repeats N. The ferromagnetic …

Ultrastrong magnon-magnon coupling in synthetic antiferromagnets induced by interlayer Dzyaloshinskii-Moriya interaction

Y Wang, J **a, C Wan, X Han, G Yu - Physical Review B, 2024 - APS
Recently, there has been significant interest in magnon-magnon hybrid systems in the field
of spintronics due to their potential for quantum engineering. Achieving strong coupling, and …