Preparation methods of different nanomaterials for various potential applications: A review
AM El-Khawaga, A Zidan… - Journal of Molecular …, 2023 - Elsevier
Nanomaterials are an interesting class of materials that include a wide variety of samples
with at least one dimension between 1 and 100 nm. Nanomaterials are cornerstones of …
with at least one dimension between 1 and 100 nm. Nanomaterials are cornerstones of …
[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC
P Dong, J Zhang, Q Yan, Z Liu, P Ma… - IEEE Electron …, 2022 - ieeexplore.ieee.org
In this work, we show that the-Ga 2 O 3 Schottky Barrier Diode (SBD) can perform beyond
the 1-D unipolar limit of the SiC and GaN by employing a deep trench with filled thick SiO 2 …
the 1-D unipolar limit of the SiC and GaN by employing a deep trench with filled thick SiO 2 …
Materials issues and devices of α-and β-Ga2O3
E Ahmadi, Y Oshima - Journal of Applied Physics, 2019 - pubs.aip.org
Ga 2 O 3 is an ultrawide bandgap semiconductor with a bandgap energy of 4.5–5.3 eV
(depending on its crystal structure), which is much greater than those of conventional wide …
(depending on its crystal structure), which is much greater than those of conventional wide …
Radiation damage effects in Ga 2 O 3 materials and devices
The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation
hardness. Their suitability for space missions or military applications, where issues of …
hardness. Their suitability for space missions or military applications, where issues of …
Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes
Abstract We report (010)-oriented β-Ga 2 O 3 bevel-field-plated mesa Schottky barrier
diodes grown by low-pressure chemical vapor deposition (LPCVD) using a solid Ga …
diodes grown by low-pressure chemical vapor deposition (LPCVD) using a solid Ga …
Critical review of Ohmic and Schottky contacts to β-Ga2O3
LAM Lyle - Journal of Vacuum Science & Technology A, 2022 - pubs.aip.org
Over the last decade, beta-phase gallium oxide (β-Ga2O3) has developed an extensive
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …