Charge trap** at oxide defects fundamentally affects the reliability of MOS transistors. In
particular, charge trap** has long been made responsible for random telegraph and 1/f …

In spite of 50 years of history, there is still no consensus on the basic physics of Negative
Bias Temperature Instability. Two competing models, Reaction-Diffusion and Defect-Centric …

One of the most important degradation modes in CMOS technologies, the bias temperature
instability (BTI) has been known since the 1960s. Already in early interpretations, charge …

Different physics-based negative bias temperature instability (NBTI) models as proposed in
the literature are reviewed, and the predictive capability of these models is benchmarked …

A comprehensive modeling framework is presented to predict the time kinetics of negative
bias temperature instability stress and recovery during and after dc and ac stresses and also …

This paper presents a physics-based compact modeling approach that incorporates the
impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide …

Bias temperature instability (BTI) is a well-investigated degradation mechanism in
technologies based on silicon, gallium nitride, or silicon carbide (SiC). Essentially, it leads to …

A comprehensive review is done of different NBTI mechanisms and models proposed in the
literature over the past years. The Reaction-Diffusion (RD) model based comprehensive …

Charge capture and emission by point defects in gate oxides of metal–oxide–semiconductor
field-effect transistors (MOSFETs) strongly affect reliability and performance of electronic …

Charge trap** plays an important role for the reliability of electronic devices and manifests
itself in various phenomena like bias temperature instability (BTI), random telegraph noise …