A comprehensive analysis of different 7T SRAM topologies to design a 1R1 W bit interleaving enabled and half select free cell for 32 nm technology node
In this paper, a single-ended, dual port, 1R1 W seven transistor-based static random access
memory bit cell is presented. The cell is designed based on a detailed review of various pre …
memory bit cell is presented. The cell is designed based on a detailed review of various pre …
Design of radiation-hardened memory cell by polar design for space applications
L Hao, L Liu, Q Shi, B Qiang, Z Li, N Liu, C Dai… - Microelectronics …, 2023 - Elsevier
This paper proposed a radiation-hardened memory cell (RHMC12T) by polar design for
space applications. The proposed cell has the following advantages:(1) it can tolerate all …
space applications. The proposed cell has the following advantages:(1) it can tolerate all …
A proof-of-concept of a multiple-cell upsets detection method for srams in space applications
This work details a new way to deal with the Multiple-Cell Upsets (MCU) in SRAM memories
for space applications. The method consists of spatially interleaving a memory plan with a …
for space applications. The method consists of spatially interleaving a memory plan with a …
Low-power SRAM cell and array structure in aerospace applications: single-event upset impact analysis
Abstract Random Access Memory (RAM) refers to the main memory of a computer. For the
central processor unit (CPU) to operate quickly and effectively, it stores operating system …
central processor unit (CPU) to operate quickly and effectively, it stores operating system …
SpaceCAM: A 16nm FinFET low-power soft-error tolerant TCAM design for space communication applications
The Ternary Content Addressable Memory (TCAM) is a crucial component of satellite
communication systems. Space-oriented TCAMs face unique challenges, as they must …
communication systems. Space-oriented TCAMs face unique challenges, as they must …
An sram-based multiple event upsets detection method for space applications
An SRAM-based Multiple Event Upsets Detection Method for Space Applications Page 1 An
SRAM-based Multiple Event Upsets Detection Method for Space Applications Leonardo H …
SRAM-based Multiple Event Upsets Detection Method for Space Applications Leonardo H …
Ultralow power system-on-chip SRAM characterization by alpha and neutron irradiation
A Haran, NM Yitzhak, E Mazal-Tov… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
The static random access memory (SRAM) of an ultralow power system-on-chip (SoC) was
tested for single-event upsets (SEUs) using alpha particles and neutron beam sources. The …
tested for single-event upsets (SEUs) using alpha particles and neutron beam sources. The …
A Tool for Automatic Radiation-Hardened SRAM Layout Generation
A new era of space exploration is emerging, characterized by a rapid surge in satellites and
significant cost reductions. Memory circuits play a vital role in space applications, and it is …
significant cost reductions. Memory circuits play a vital role in space applications, and it is …
Impact of total ionizing dose effect on SOI-FinFET with spacer engineering
Semiconductor devices are extensively used in the electronic system of satellites. In the
outer atmosphere, natural radiation is the major threat to semiconductor devices. With …
outer atmosphere, natural radiation is the major threat to semiconductor devices. With …
A MCU-robust Interleaved Data/Detection SRAM for Space Environments
This work extends a new method to detect Multiple-Cell Upsets (MCU) in SRAM memories
for space applications. The method involves spatially interleaving a memory plan with a …
for space applications. The method involves spatially interleaving a memory plan with a …