The interface is the device. As the feature size rapidly shrinks, silicon‐based electronic
devices are facing multiple challenges of material performance decrease and interface …

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) with fascinating
electronic energy band structures, rich valley physical properties and strong spin–orbit …

The practical applications of two‐dimensional (2D) transition‐metal borides (MBenes) have
been severely hindered by the lack of accessible MBenes because of the difficulties in the …

Valley pseudospin is an electronic degree of freedom that promises highly efficient
information processing applications. However, valley-polarized excitons usually have short …

Abstract 2D materials (2DMs), due to spin‐valley locking degree of freedom, exhibit strongly
bound exciton and chiral optical selection rules and become promising material candidates …

The 2D ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an
exciting material platform for probing Berry phase physics. How FVSC can be incorporated …

Two-dimensional layered materials can stack into new material systems, with van der Waals
interaction between the adjacent constituent layers. This stacking process of two …

The development of integrated circuits (ICs) based on a complementary metal–oxide–
semiconductor through transistor scaling has reached the technology bottleneck; thus …

Valleytronics is a research field utilizing a valley degree of freedom of electrons for
information processing and storage. A strong valley polarization is critical for realistic …

The structural arrangement, as well as the electrical characteristics and optical attributes, of
the ZnI 2/WTe 2 heterojunction are determined using Density Functional Theory (DFT) first …