Mesoporous GaN for Photonic Engineering Highly Reflective GaN Mirrors as an Example
A porous medium is a special type of material where voids are created in a solid medium.
The introduction of pores into a bulk solid can profoundly affect its physical properties and …
The introduction of pores into a bulk solid can profoundly affect its physical properties and …
High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN
Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great
demand for several technologies, but require the development of novel device structures …
demand for several technologies, but require the development of novel device structures …
Nanoporous GaN/n-type GaN: A Cathode Structure for ITO-Free Perovskite Solar Cells
Introducing suitable electron/hole transport layers and transparent conductive layers (TCLs)
into perovskite solar cells (PSCs) is key to enhancing the selective extraction of charge …
into perovskite solar cells (PSCs) is key to enhancing the selective extraction of charge …
Toward high-bandwidth yellow-green micro-LEDs utilizing nanoporous distributed Bragg reflectors for visible light communication
In this study, high− 3 dB bandwidth yellow-green InGaN/GaN micro-LEDs grown on polar c-
plane GaN substrates are realized by using nanoporous distributed Bragg reflectors, which …
plane GaN substrates are realized by using nanoporous distributed Bragg reflectors, which …
Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes
A facile method to facilitate epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was
developed by using single-walled carbon nanotubes (SWCNTs). High-quality GaN was …
developed by using single-walled carbon nanotubes (SWCNTs). High-quality GaN was …
Dislocation reduction and stress relaxation of GaN and InGaN multiple quantum wells with improved performance via serpentine channel patterned mask
The existence of high threading dislocation density (TDD) in GaN-based epilayers is a long
unsolved problem, which hinders further applications of defect-sensitive GaN-based …
unsolved problem, which hinders further applications of defect-sensitive GaN-based …
Electrically pumped blue laser diodes with nanoporous bottom cladding
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with
nanoporous bottom cladding grown by plasma-assisted molecular beam epitaxy on c-plane …
nanoporous bottom cladding grown by plasma-assisted molecular beam epitaxy on c-plane …
Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN
Embedding p-type gallium nitride (p-GaN) with controlled Mg out-diffusion in adjacent
epitaxial layers is a key for designing various multi-junction structures with high precision …
epitaxial layers is a key for designing various multi-junction structures with high precision …
Electrochemical Prediction Tool of Porous GaN Morphology
I Medjahed, C Licitra, S Sadki… - The Journal of Physical …, 2024 - ACS Publications
We report a systematic electrochemical study that allows fine-tuning of the pore formation
process in gallium nitride (GaN). We have investigated several parameters of pore …
process in gallium nitride (GaN). We have investigated several parameters of pore …
Porous nitride light-emitting diodes
N Amador-Mendez, T Mathieu-Pennober… - ACS …, 2022 - ACS Publications
A porous InGaN/GaN blue light-emitting diode is demonstrated using selective area
sublimation. Transmission electron microscopy reveals that the structure is porous down to …
sublimation. Transmission electron microscopy reveals that the structure is porous down to …