The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …

Ferroelectric (FE) materials, which typically adopt the perovskite structure with non-
centrosymmetry and exhibit spontaneous polarization, are promising for applications in …

Unconventional ferroelectricity in fluorite‐structure oxides enables tremendous opportunities
in nanoelectronics owing to their superior scalability and silicon compatibility. However, their …

Investigations on fluorite-structured ferroelectric HfO2/ZrO2 thin films are aiming to achieve
high-performance films required for memory and computing technologies. These films …

Ferroelectric tunnel junction (FTJ) is a promising emerging memristor for the artificial
synapse in neuro-inspired computing, which has parallel data processing and low power …

A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is
demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiOx/W (14 …

Robust ferroelectricity in HfO2-based ultrathin films has the potential to revolutionize
nonvolatile memory applications in nanoscale electronic devices because of their …

In the last decades, ferroelectricity has been discovered in Si-doped HfO2 and Hf1–x Zr x O2
thin films, and the origin of ferroelectricity is considered to be the presence of the polar Pca …

Devices using silicon-based materials have been studied and developed by the
semiconductor industry. With silicon-based materials reaching their performance limit, there …

Over a decade ago, ferroelectricity was discovered in doped HfO2 thin films. The HfO2-
based thin films have attracted much attention due to their remarkable scalability and CMOS …