[HTML][HTML] Integration of graphene and MoS2 on silicon carbide: Materials science challenges and novel devices
Although silicon carbide (SiC) is widely regarded as the material of choice for power
electronics, the development of several new applications on the SiC material platform is …
electronics, the development of several new applications on the SiC material platform is …
Efficient high-temperature electromagnetic wave absorption enabled by structuring binary porous SiC with multiple interfaces
X Lan, Z Wang - Carbon, 2020 - Elsevier
Introducing enhanced interface polarization would be an effective way to adjust the dielectric
behavior with temperature and prepare high-temperature electromagnetic (EM) wave …
behavior with temperature and prepare high-temperature electromagnetic (EM) wave …
High-temperature electromagnetic wave absorption, mechanical and thermal insulation properties of in-situ grown SiC on porous SiC skeleton
X Lan, Y Li, Z Wang - Chemical Engineering Journal, 2020 - Elsevier
Multi-functional integrated materials used in extreme environments are gaining increased
interest. In this study, a binary porous SiC was fabricated by in-situ synthesis in a SiC …
interest. In this study, a binary porous SiC was fabricated by in-situ synthesis in a SiC …
Giant atomic swirl in graphene bilayers with biaxial heterostrain
The study of moiré engineering started with the advent of van der Waals heterostructures, in
which stacking 2D layers with different lattice constants leads to a moiré pattern controlling …
which stacking 2D layers with different lattice constants leads to a moiré pattern controlling …
[HTML][HTML] Material proposal for 2D indium oxide
Realization of semiconductor materials at the two-dimensional (2D) limit can elicit
exceptional and diversified performance exercising transformative influence on modern …
exceptional and diversified performance exercising transformative influence on modern …
Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface
The possibility for kinetic stabilization of prospective 2D AlN was explored by rationalizing
metal organic chemical vapor deposition (MOCVD) processes of AlN on epitaxial graphene …
metal organic chemical vapor deposition (MOCVD) processes of AlN on epitaxial graphene …
MOCVD of AlN on epitaxial graphene at extreme temperatures
The initial stages of metal organic chemical vapor deposition (MOCVD) of AlN on epitaxial
graphene at temperatures in excess of 1200° C have been rationalized. The use of epitaxial …
graphene at temperatures in excess of 1200° C have been rationalized. The use of epitaxial …
Hierarchical SiC fiber aerogel toward microwave attenuation and thermal insulation application
Materials with structural hierarchy have drawn great attenuation due to their fascinating
physical and mechanical properties given by the unique microstructures. In this study …
physical and mechanical properties given by the unique microstructures. In this study …
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
The nucleation and growth mechanism of aluminum oxide (Al 2 O 3) in the early stages of
atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on silicon carbide (4H …
atomic layer deposition (ALD) on monolayer epitaxial graphene (EG) on silicon carbide (4H …
Analysis of p-Type Do** in Graphene Induced by Monolayer-Oxidized TMDs
Do** is one of the most difficult technological challenges for realizing reliable two-
dimensional (2D) material-based semiconductor devices, arising from their ultrathinness …
dimensional (2D) material-based semiconductor devices, arising from their ultrathinness …