Integrated circuit device and fabrication using metal-doped chalcogenide materials
J Li, A McTeer - US Patent 6,800,504, 2004 - Google Patents
Methods of forming metal-doped chalcogenide layers and devices containing such doped
chalcogenide layers include using a plasma to induce diffusion of metal into a chalco genide …
chalcogenide layers include using a plasma to induce diffusion of metal into a chalco genide …
PCRAM memory cell and method of making same
ST Harshfield, DQ Wright - US Patent 7,102,150, 2006 - Google Patents
An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for
example, with a conductive material. Such as silver. Chalcogenide material is disposed over …
example, with a conductive material. Such as silver. Chalcogenide material is disposed over …
Complementary bit PCRAM sense amplifier and method of operation
G Hush, J Baker - US Patent 6,791,859, 2004 - Google Patents
(57) ABSTRACT A method and apparatus is disclosed for Sensing the resis tance State of a
Programmable Conductor Random Access Memory (PCRAM) element using …
Programmable Conductor Random Access Memory (PCRAM) element using …
Programmable conductor memory cell structure
TL Gilton - US Patent 6,864,500, 2005 - Google Patents
In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte
element in response to an applied electric field in one direction only, causing a conductive …
element in response to an applied electric field in one direction only, causing a conductive …
Silver-selenide/chalcogenide glass stack for resistance variable memory
KA Campbell, JT Moore - US Patent 7,151,273, 2006 - Google Patents
The invention is related to methods and apparatus for providing a resistance variable
memory element with improved data retention and Switching characteristics. According to an …
memory element with improved data retention and Switching characteristics. According to an …
Method of forming chalcogenide comprising devices
KA Campbell, TL Gilton, JT Moore, J Li - US Patent 6,955,940, 2005 - Google Patents
A method of forming a non-volatile resistance variable device includes forming a first
conductive electrode material on a substrate. A metal doped chalcogenide comprising …
conductive electrode material on a substrate. A metal doped chalcogenide comprising …
Method of forming a chalcogenide comprising device
JT Moore, TL Gilton - US Patent 6,709,887, 2004 - Google Patents
A method of metal do** a chalcogenide material includes forming a metal over a
substrate. A chalcogenide material is formed on the metal. Irradiating is conducted through …
substrate. A chalcogenide material is formed on the metal. Irradiating is conducted through …
Methods of metal do** a chalcogenide material
JT Moore, TL Gilton - US Patent 6,727,192, 2004 - Google Patents
A method of metal do** a chalcogenide material includes forming a metal over a
substrate. A chalcogenide material is formed on the metal. Irradiating is conducted through …
substrate. A chalcogenide material is formed on the metal. Irradiating is conducted through …
Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising …
JT Moore - US Patent 6,638,820, 2003 - Google Patents
A method of precluding diffusion of a metal into adjacent chalcogenide material upon
exposure to a quanta of actinic energy capable of causing diffusion of the metal into the …
exposure to a quanta of actinic energy capable of causing diffusion of the metal into the …
Chalcogenide comprising device
JT Moore, TL Gilton - US Patent 6,710,423, 2004 - Google Patents
Hajto, J.; Rose, MJ; Osborne, IS; Snell, AJ; Le Comber, PG, Owen, AE, Quantization effects
in metal/a-Si: H/metal devices, Int. J. Electronics 73 (1992) 911–913. Hajto, J.; Hu, J.; Snell …
in metal/a-Si: H/metal devices, Int. J. Electronics 73 (1992) 911–913. Hajto, J.; Hu, J.; Snell …