Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides

Y Wang, S Sarkar, H Yan, M Chhowalla - Nature Electronics, 2024 - nature.com
The development of high-performance electronic devices based on two-dimensional (2D)
transition metal dichalcogenide semiconductors has recently advanced from one-off proof-of …

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

G Xue, B Qin, C Ma, P Yin, C Liu, K Liu - Chemical Reviews, 2024 - ACS Publications
Over the past decade, research on atomically thin two-dimensional (2D) transition metal
dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high …

Superconductivity in 5.0° twisted bilayer WSe2

Y Guo, J Pack, J Swann, L Holtzman, M Cothrine… - Nature, 2025 - nature.com
The discovery of superconductivity in twisted bilayer and trilayer graphene,,,–has generated
tremendous interest. The key feature of these systems is an interplay between interlayer …

Charge-transfer contacts for the measurement of correlated states in high-mobility WSe2

J Pack, Y Guo, Z Liu, BS Jessen, L Holtzman… - Nature …, 2024 - nature.com
Two-dimensional semiconductors, such as transition metal dichalcogenides, have
demonstrated tremendous promise for the development of highly tunable quantum devices …

Enhancing Carrier Mobility in Monolayer MoS2 Transistors with Process-Induced Strain

Y Zhang, HL Zhao, S Huang, MA Hossain… - ACS …, 2024 - ACS Publications
Two-dimensional electronic materials are a promising candidate for beyond-silicon
electronics due to their favorable size scaling of electronic performance. However, a major …

Validating the use of conductive atomic force microscopy for defect quantification in 2D materials

K Xu, M Holbrook, LN Holtzman, AN Pasupathy… - ACS …, 2023 - ACS Publications
Defects significantly affect the electronic, chemical, mechanical, and optical properties of two-
dimensional (2D) materials. Thus, it is critical to develop a method for convenient and …

Spontaneous exciton dissociation in transition metal dichalcogenide monolayers

T Handa, M Holbrook, N Olsen, LN Holtzman… - Science …, 2024 - science.org
Since the seminal work on MoS2, photoexcitation in atomically thin transition metal
dichalcogenides (TMDCs) has been assumed to result in excitons, with binding energies …

Atomic Defect Quantification by Lateral Force Microscopy

Y Yang, K Xu, LN Holtzman, K Yang, K Watanabe… - ACS …, 2024 - ACS Publications
Atomic defects in two-dimensional (2D) materials impact electronic and optoelectronic
properties, such as do** and single photon emission. An understanding of defect …

Edge‐Passivated Monolayer WSe2 Nanoribbon Transistors

S Chen, Y Zhang, WP King, R Bashir… - Advanced …, 2024 - Wiley Online Library
The ongoing reduction in transistor sizes drives advancements in information technology.
However, as transistors shrink to the nanometer scale, surface and edge states begin to …

Electronic transport, metal-insulator transition, and Wigner crystallization in transition metal dichalcogenide monolayers

Y Huang, S Das Sarma - Physical Review B, 2024 - APS
Two recent electronic transport experiments from Columbia University and Harvard
University have reported record high mobility and low channel densities in flux-grown …