Hexagonal boron nitride (h‐BN) has emerged as a strong candidate for two‐dimensional
(2D) material owing to its exciting optoelectrical properties combined with mechanical …

Complementary metal–oxide–semiconductor (CMOS) logic circuits at their ultimate scaling
limits place extreme demands on the properties of all materials involved. The requirements …

Abstract 2D semiconductors have emerged both as an ideal platform for fundamental
studies and as promising channel materials in beyond‐silicon field‐effect‐transistors due to …

Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of~
5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high …

Hexagonal boron nitride (hBN) is emerging as essential for 2D material-based technologies.
New optoelectronic applications require high crystal quality hBN with low defect density and …

We demonstrate the dry release transfer of single-layer and bi-layer graphene and few-layer
h-BN by utilizing poly (propylene) carbonate (PPC) films. Because of the strong adhesion …

Despite a rich choice of two-dimensional materials, which exists these days,
heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control …

Heterogeneous structured nanomaterials can be considered as a class of advanced
materials that integrate multiple phases, different elements, or components into a single …

Defects in hexagonal boron nitride (h-BN) play important roles in tunneling transport through
the h-BN barrier. Here, using carbon-doped h-BN (h-BN: C) as a tunnel barrier containing …

Quantum dots have sharply defined energy levels, which can be used for high resolution
energy spectroscopy when integrated in tunneling circuitry. Here we report dot-assisted …