In ambient atmospheres, aluminum becomes rapidly coated with a compact 2–3 nm thick
oxide layer. This native oxide layer prevents the metal surface from further oxidation …

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Lithium sulfide (Li2S) is a promising cathode for a practical lithium‐sulfur battery as it can be
coupled with various safe lithium‐free anodes. However, the high activation potential (> 3.5 …

Atomic layer deposition (ALD) is a thin film technology that in the past two decades rapidly
developed from a niche technology to an established method. It proved to be a key …

A controlled field-effect passivation by a well-defined density of fixed charges is crucial for
modern solar cell surface passivation schemes. Al2O3 nanolayers grown by atomic layer …

As the nanoelectronics industry looks to transition to both three dimensional transistor and
interconnect technologies at the< 22 nm node, highly conformal dielectric coatings with …

The fabrication of next-generation semiconductor devices has created a need for low-
temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …

Atomic layer deposition (ALD) represents a unique deposition technique that allows to coat
uniformly various high aspect ratio (HAR) porous nanostructures, in addition to its traditional …

SiO 2 is the most widely used dielectric material but its growth or deposition involves high
thermal budgets or suffers from shadowing effects. The low-temperature method presented …

The size-dependent properties of pseudo-one-dimensional nano-objects have been
abundantly documented for single-phase rods or wires.[1, 2] Elongated nanostructures that …