Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Variations in the growth behavior, physical and electrical properties, and microstructure of
the atomic layer deposited (ALD) HfO2 gate dielectrics were examined with two types of …

In this paper, a new precursor La (thd) 3-DMEA (thd= 2, 2, 6, 6-tetramethyl-3, 5-
heptanedione, DMEA= N, N′-dimethylethylenediamine) was synthesized and …

Atomic layer deposition (ALD) has been established as a powerful method for the growth of
very thin and conformal films to be used in ultra-scaled conventional and novel …

We compared the electrical properties of HfO 2, HfO 2/La 2 O 3, and La-doped HfO 2 gate
insulators deposited on Ge substrate using an atomic layer deposition (ALD) process …

La 2 O 3 films were grown on Si substrates by atomic layer deposition technique with
different thickness. Crystallization characteristics of the La 2 O 3 films were analyzed by …

Resistive random access memory (RRAM) devices were designed using Al 2 O 3/La 2 O
3/Al 2 O 3 multi-stacked films grown by atomic layer deposition as functional layers. The …

GaN based metal-semiconductor-metal (MSM) type Schottky heterojunction-based
ultraviolet (UV) photodetectors (PDs) have already proven as an efficient candidate for …

The atomic layer deposition (ALD) of aluminum oxide (Al2O3) from trimethylaluminium and
water on silicon nitride was studied on as-received and HF-cleaned Si3N4 surfaces. In situ …

In this work, we describe a rapid thermal annealing (RTA) process for the La 2 O 3/SiO 2/4H-
SiC interface and investigate its effect on the material's electrical properties. Our results …