Recent progress in proximity coupling of magnetism to topological insulators

S Bhattacharyya, G Akhgar, M Gebert… - Advanced …, 2021 - Wiley Online Library
Inducing long‐range magnetic order in 3D topological insulators can gap the Dirac‐like
metallic surface states, leading to exotic new phases such as the quantum anomalous Hall …

Benchmarking noise and dephasing in emerging electrical materials for quantum technologies

S Islam, S Shamim, A Ghosh - Advanced Materials, 2023 - Wiley Online Library
As quantum technologies develop, a specific class of electrically conducting materials is
rapidly gaining interest because they not only form the core quantum‐enabled elements in …

Morphology controlled synthesis of low bandgap SnSe 2 with high photodetectivity

RK Rai, S Islam, A Roy, G Agrawal, AK Singh, A Ghosh… - Nanoscale, 2019 - pubs.rsc.org
Engineering the properties of layered metal dichalcogenides (LMDs) requires stringent
control of their morphology. Herein, using a scalable one-step solvothermal technique, we …

Ultra-sensitive graphene–bismuth telluride nano-wire hybrids for infrared detection

S Islam, JK Mishra, A Kumar, D Chatterjee… - Nanoscale, 2019 - pubs.rsc.org
The myriad technological applications of infrared radiation sensors make the search for ultra-
sensitive detectors extremely crucial. Materials such as bismuth telluride (Bi2Te3), having a …

Low-temperature saturation of phase coherence length in topological insulators

S Islam, S Bhattacharyya, H Nhalil, M Banerjee… - Physical Review B, 2019 - APS
Implementing topological insulators as elementary units in quantum technologies requires a
comprehensive understanding of the dephasing mechanisms governing the surface carriers …

1 / f noise in van der Waals materials and hybrids

P Karnatak, T Paul, S Islam, A Ghosh - Advances in Physics: X, 2017 - Taylor & Francis
The weak interlayer coupling in van der Waals solids allows isolation of individual atomic or
molecular layers with remarkable electrical, optical, and structural properties. The …

Phonons in the 1/f noise of topological insulators

M Mihaila, S Dinulescu, P Varasteanu - Applied Physics Letters, 2023 - pubs.aip.org
In topological insulators, such as (Bi, Sb) 2Te3 and BiSbTeSe1. 6, the 1/f noise intensity
features intriguing peaks, which develop at some specific temperatures. In search for their …

Optimal architecture for ultralow noise graphene transistors at room temperature

S Kakkar, P Karnatak, MA Aamir, K Watanabe… - Nanoscale, 2020 - pubs.rsc.org
The fundamental origin of low-frequency noise in graphene field effect transistors (GFETs)
has been widely explored but a generic engineering strategy towards low noise GFETs is …

A generic method to control hysteresis and memory effect in Van der Waals hybrids

T Ahmed, S Islam, T Paul, N Hariharan… - Materials Research …, 2020 - iopscience.iop.org
The diverse properties of two-dimensional materials have been utilized in a variety of
architecture to fabricate high quality electronic circuit elements. Here we demonstrate a …

Bulk-impurity induced noise in large-area epitaxial thin films of topological insulators

S Islam, S Bhattacharyya, A Kandala… - Applied Physics …, 2017 - pubs.aip.org
We report a detailed study on low-frequency 1/f-noise in large-area molecular-beam epitaxy
grown thin (⁠∼ 10 nm) films of topological insulators as a function of temperature, gate …