With the increasing power density and reduced size of the GaN-based electronic power
converters, the heat dissipation in the devices becomes the key issue toward the real …

In many leading industrial applications such as aerospace, military, automotive, and deep-
well drilling, extreme temperature environment is the fundamental hindrance to the use of …

The implementation of 5G-and-beyond networks requires faster, high-performance, and
power-efficient semiconductor devices, which are only possible with materials that can …

Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-
Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 …

The in-plane thermal conductivity of polycrystalline diamond near its nucleation site, which is
a key parameter to an efficient integration of diamond in modern high power AlGaN/GaN …

Nanocrystalline diamond (NCD) thin films are deposited as a heat-spreading cap** layer
on AlGaN/GaN HEMT devices. Compared to a control sample, the NCD-capped HEMTs …

GaN-based heterostructures, and here, particularly, the lattice matched InAlN/GaN
configuration, possess high chemical and thermal stability. Concentrating on refractory metal …

Gallium nitride is a wide bandgap semiconductor material with high electric field strength
and electron mobility that translate in a tremendous potential for radio-frequency …

Integration of diamond on GaN can ease the challenges associated with thermal
management of GaN-based power amplifiers which need to base on highly scaled …

Joule self-heating is the main obstacle limiting the performance of GaN power devices. A
nano-diamond (NCD) film for near-junction heat transfer has been approved as an effective …