[HTML][HTML] Effect of the AlAs cap** layer thickness on the structure of InAs/GaAs QD

N Ruiz-Marín, DF Reyes, L Stanojević, T Ben… - Applied Surface …, 2022 - Elsevier
Recently, very thin AlAs cap** layers (CLs) have been proposed as a useful tool to
increase the performance of InAs/GaAs quantum dot (QDs) devices. However, the structure …

Evaluation of different cap** strategies in the InAs/GaAs QD system: Composition, size and QD density features

D González, S Flores, N Ruiz-Marín, DF Reyes… - Applied Surface …, 2021 - Elsevier
In this work, two different strategies to preserve InAs/GaAs QDs against decomposition
during the cap** process have been compared structurally and optically. They are based …

Effect of the wetting layer on the output power of a double tunneling-injection quantum-dot laser

DS Han, LV Asryan - Journal of lightwave technology, 2009 - ieeexplore.ieee.org
To suppress bipolar population and hence electron–hole recombination outside quantum
dots (QDs), tunneling-injection of electrons and holes into QDs from two separate quantum …

Effect of cap** rate on the performance of InAs/GaAs quantum dot solar cell

A Rai - Physica Scripta, 2024 - iopscience.iop.org
The GaAs cap** layer significantly influences the structural and optoelectronic
characteristics of the InAs quantum dot (QD). The cap** rate modifies the essential …

Cobertura de pontos quâ nticos de InAs pela té cnica de epitaxia por migraà § ã o aumentada

VMO Curbelo - 2023 - teses.usp.br
Neste trabalho, uma té cnica alternativa de crescimento epitaxial, chamada de epitaxia
por migraà § ã o aumentada (Migration-Enhanced Epitaxy, MEE), foi implementada para …

Double tunneling-injection quantum dot laser: effect of the wetting layer

DS Han, LV Asryan - Quantum Dots and Nanostructures …, 2010 - spiedigitallibrary.org
Effect of the wetting layer (WL) on the output power of a double tunneling-injection (DTI)
quantum dot (QD) laser is studied. Such a laser was proposed earlier to suppress bipolar …