The present invention provides methods for forming at least partially relaxed strained
material layers on a target Substrate. The methods include forming islands of the strained …

US PATENT DOCUMENTS 2006/0205180 A1 9/2006 Henley et al.................. 438,458
2006/0211219 A1 9/2006 Henley et al. 438,458 2007/0048975 A1 3/2007 Chen et al …

BACKGROUND Materials that are not available in bulk form are often fabricated by
heteroepitaxy on substrates whose lattice parameter is not perfectly matched. This results in …

(56) References Cited US PATENT DOCUMENTS The present invention provides, in part,
methods producing M multilayer semiconductor structures having one or more at 4,994,867 …

(57) ABSTRACT A method for transferring a layer onto a Support includes transferring the
layer, assembled on an initial Substrate, onto a liquid layer that has been previously …

BACKGROUND Materials that are not available in bulk form are often fabricated by
heteroepitaxy on substrates whose lattice parameter is not perfectly matched. This results in …

The invention relates to a process for fabricating a hetero structure. This process is
noteworthy in that it comprises the following steps: a) a strained crystalline thin film is …

US8912081B2 - Stiffening layers for the relaxation of strained layers - Google Patents
US8912081B2 - Stiffening layers for the relaxation of strained layers - Google Patents Stiffening …

Paris (FR)(Continued)(*) Notice: Subject to any disclaimer, the term of this patent is
extended or adjusted under 35 OTHER PUBLICATIONS USC 154 (b) by 422 days. Bowden …

Following an idea of Suo et al.[1], we extend the linear stability analysis of a two-layer
structure, intended to model the relaxation of a thin elastic film on a viscous layer, to account …