In this paper, we present a fast and expandable artificial neural network (ANN)-based
compact model and parameter extraction flow to replace the existing complicated compact …

Negative-capacitance fin field-effect transistors (NC-FinFETs), due to their superior gate
electrostatics and dominance over short channel effects (SCEs), have been a key …

In this work, we propose a vertical gate-all-around device architecture (GAA-FinFET) with the
aim of simultaneously improving device performance as well as addressing the short …

Superior gate electrostatics and dominating control over short-channel effects (SCEs) set the
Negative Capacitance Fin Field-Effect Transistor (NC-FinFET) apart from conventional …

With the scaling of the transistor, fabrication of an actual device and modeling of an ultra-
short channel transistor becomes more and more challenging. Dr. Salahuddin proposed a …

In the era of shrinking technology nodes and gate lengths, Negative Capacitance Fin Field-
Effect Transistors (NC-FinFET) hold a one-sided dominance over the conventional …