Abstract Three-dimensional (3D) integration is considered an effective approach to extend
and expand Moore's Law. Among them, Through-Silicon Via (TSV) technology provides …

In this work, we propose an efficient and accurate full-chip thermo-mechanical stress and
reliability analysis tool and design optimization methodology to alleviate mechanical …

Through-silicon via (TSV) fabrication causes tensile stress around TSVs which results in
significant carrier mobility variation in the devices in their neighborhood. Keep-out zone …

Three-dimensional (3-D) integration with through-silicon vias (TSVs) has emerged as an
effective solution to overcome the wiring limit imposed on device density and performance …

This paper focuses on low-power and low-slew clock network design and analysis for
through-silicon via (TSV) based three-dimensional stacked ICs (3D ICs). First, we investigate …

Vertically integrated circuits (3-D ICs) may revitalize Moore's law scaling which has slowed
down in recent years. 3-D stacking is an emerging technology that stacks multiple dies …

Nanometer-scale circuits are fundamentally different from those built in their predecessor
technologies in that they are subject to a wide range of new effects that induce on-chip …

Three-dimensional integrated circuit (3D IC) with through-silicon-via (TSV) is believed to
offer new levels of efficiency, power, performance, and form-factor advantages over the …

3D integrated circuits (3D ICs) based on through-silicon vias (TSVs) have emerged as a
promising solution for overcoming interconnect and power bottlenecks in IC design …

This research aims to explore the influences of shapes, structures, and arrangements of
thermal through-silicon vias (TTSVs) on the thermal and mechanical reliability of a three …