Recent advances for the synthesis and applications of 2-dimensional ternary layered materials

J Peng, Z Chen, B Ding, HM Cheng - Research, 2023 - spj.science.org
Layered materials with unique structures and symmetries have attracted tremendous interest
for constructing 2-dimensional (2D) structures. The weak interlayer interaction renders them …

Progress on the antiferromagnetic topological insulator MnBi2Te4

S Li, T Liu, C Liu, Y Wang, HZ Lu… - National Science …, 2024 - academic.oup.com
Topological materials, which feature robust surface and/or edge states, have now been a
research focus in condensed matter physics. They represent a new class of materials …

Unification of nonlinear anomalous Hall effect and nonreciprocal magnetoresistance in metals by the quantum geometry

D Kaplan, T Holder, B Yan - Physical review letters, 2024 - APS
The quantum geometry has significant consequences in determining transport and optical
properties in quantum materials. Here, we use a semiclassical formalism coupled with …

Exploring the Epitaxial Growth Kinetics and Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4 Films

J Luo, Q Tong, Z Jiang, H Bai, J Wu, X Liu, S **e… - ACS …, 2023 - ACS Publications
The discovery of MnBi2Te4-based intrinsic magnetic topological insulators has fueled
tremendous interest in condensed matter physics, owing to their potential as an ideal …

Distinct Magnetic Gaps between Antiferromagnetic and Ferromagnetic Orders Driven by Surface Defects in the Topological Magnet

H Tan, B Yan - Physical review letters, 2023 - APS
Many experiments observed a metallic behavior at zero magnetic fields (antiferromagnetic
phase, AFM) in MnBi 2 Te 4 thin film transport, which coincides with gapless surface states …

Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4

Y Li, Y Wang, Z Lian, H Li, Z Gao, L Xu, H Wang… - Nature …, 2024 - nature.com
The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising
platform for exploring the layer-dependent magnetism and topological states of matter …

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films

Y Bai, Y Li, J Luan, R Liu, W Song, Y Chen… - National Science …, 2024 - academic.oup.com
The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to the
high-temperature quantum anomalous Hall (QAH) effect as well as various novel topological …

Irremovable Mn-Bi Site Mixing in MnBi2Te4

X Wu, C Ruan, P Tang, F Kang, W Duan, J Li - Nano Letters, 2023 - ACS Publications
MnBi2Te4, an antiferromagnetic topological insulator, was theoretically predicted to have a
gapped surface state on its (111) surface. However, a much smaller gapped or even gapless …

Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi2Te4

SK Chong, Y Cheng, H Man, SH Lee, Y Wang… - Nature …, 2024 - nature.com
Achieving spin-pinning at the interface of hetero-bilayer ferromagnet/antiferromagnet
structures in conventional exchange bias systems can be challenging due to difficulties in …

Evolution of Mn1−xGexBi2Te4 Electronic Structure under Variation of Ge Content

TP Estyunina, AM Shikin, DA Estyunin, AV Eryzhenkov… - Nanomaterials, 2023 - mdpi.com
One of the approaches to manipulate MnBi 2 Te 4 properties is the magnetic dilution, which
inevitably affects the interplay of magnetism and band topology in the system. In this work …