Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …

The optimization of the synthesis of III-V compounds is a crucial subject in enhancing the
external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other …

We report on the thorough investigation of light emitting diodes (LEDs) made of core-shell
nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown …

The proof of strong two-dimensional lateral quantum confinement in the In-rich core of red-
light emitting self-formed core–shell InGaN nanowires is given. The nanowires are directly …

The combination of inorganic semiconductors with organic thin films promises new
strategies for the realization of complex hybrid optoelectronic devices. Oxidative chemical …

The fast charge carrier recombination and slow oxidation kinetics of ternary semiconductor
InGaN as promising photocatalyst impede the PEC performance. Herein, we fabricate …

Cathodoluminescence spectroscopy is a key analysis technique in nanophotonics research
and technology, yet many aspects of its fundamental excitation mechanisms are not well …

Abstract Color‐tunable InGaN/GaN multi‐quantum‐well (MQW) light‐emitting diodes (LEDs)
are reported based on GaN microfacet structure directly grown on c‐plane patterned …

Three-dimensional core–shell nanostructures could resolve key problems existing in
conventional planar deep UV light-emitting diode (LED) technology due to their high …