Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients
in traditional ceramics. MO semiconductors are strikingly different from conventional …

Amorphous oxide semiconductors (AOSs) have been commercialized since 2012 as thin‐
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …

Transparent electronics is today one of the most advanced topics for a wide range of device
applications. The key components are wide bandgap semiconductors, where oxides of …

Metal oxide optoelectronics is an emerging field that exploits the intriguing properties of the
ns orbital-derived isotropic band structure as a replacement for traditional silicon-based …

A 2 in. active‐matrix light‐emitting diode (AMLED) display by integration of the micro‐LED
onto the oxide thin‐film transistor (TFT) backplane using flip chip bonding is reported. A blue …

The effect of active layer (amorphous indium–gallium–zinc oxide, a‐IGZO) splitting on the
performances of back‐channel‐etched (BCE) and etch‐stopper (ES) thin‐film transistors …

Zinc‐based metal oxide semiconductors have attracted attention as an alternative to current
silicon‐based semiconductors for applications in transparent and flexible electronics …

The analysis of current-voltage (IV) and capacitance-voltage (CV) characteristics for
amorphous indium gallium zinc oxide Thin film transistors as a function of active layer …

Based on a rational classification of defects in amorphous materials, we propose a simplified
model to describe intrinsic defects and hydrogen impurities in amorphous indium gallium …

The development of low-cost, high-mobility oxide thin-film transistors (TFTs) with excellent
stability is of increasing interest. The coplanar oxide TFTs can be used for high-speed, large …