The threshold voltage value, which is the most important electrical parameter in modeling
MOSFETs, can be extracted from either measured drain current or capacitance …

The remarkable development of organic thin film transistors (OTFTs) has led to their
emerging use in active matrix flat-panel displays, radio frequency identification cards, and …

This article presents an up-to-date review of the several extraction methods commonly used
to determine the value of the threshold voltage of MOSFETs. It includes the different methods …

The characterization of nanosize SOI materials and devices is challenging because multiple
oxides, interfaces and channels coexist. Conventional measurement methods need to be …

This paper presents the evaluation of the analog properties of nMOS junctionless (JL)
multigate transistors, comparing their performance with those exhibited by inversion-mode …

The decrease of transconductance g/sub m/and current gain cutoff frequency f/sub T/at high
drain current levels in AlGaN/GaN high-electron mobility transistors (HEMTs) severely limits …

Mobility is a critical parameter that is routinely used for benchmarking the performance of
field‐effect transistors (FETs) based on novel nanomaterials. In fact, mobility values are often …