Chemical approaches for do** nanodevice architectures
Advanced do** technologies are key for the continued scaling of semiconductor devices
and the maintenance of device performance beyond the 14 nm technology node. Due to …
and the maintenance of device performance beyond the 14 nm technology node. Due to …
Ultra-doped n-type germanium thin films for sensing in the mid-infrared
S Prucnal, F Liu, M Voelskow, L Vines, L Rebohle… - Scientific reports, 2016 - nature.com
A key milestone for the next generation of high-performance multifunctional microelectronic
devices is the monolithic integration of high-mobility materials with Si technology. The use of …
devices is the monolithic integration of high-mobility materials with Si technology. The use of …
Strategies for increased donor electrical activity in germanium (opto-) electronic materials: A review
C Monmeyran, IF Crowe, RM Gwilliam… - International …, 2017 - Taylor & Francis
Germanium is one of the strongest candidate materials for next generation integrated
optoelectronic devices owing to its high carrier mobilities, bandgap at the telecom …
optoelectronic devices owing to its high carrier mobilities, bandgap at the telecom …
[PDF][PDF] Comparative STM-based study of thermal evolution of Co and Ni germanide nanostructures on Ge (001)
T Grzela - 2015 - opus4.kobv.de
Since 1947, when Bardeen and Brattain initiated the era of microelectronics by constructing
the first Germanium (Ge) transistor, semiconductors have become the main material platform …
the first Germanium (Ge) transistor, semiconductors have become the main material platform …
Organic functionalisation, do** and characterisation of semiconductor surfaces for future CMOS device applications
JJ O'Connell - 2016 - cora.ucc.ie
Abstract Organic Functionalisation, Do** and Characterisation of Semiconductor Surfaces
for Future CMOS Device Applications Semiconductor materials have long been the driving …
for Future CMOS Device Applications Semiconductor materials have long been the driving …
[CITATION][C] Ultra-doped n-type germanium thin films for sensing in the mid-infrared
W Skorupa