Conductive bridging random access memory—materials, devices and applications

MN Kozicki, HJ Barnaby - Semiconductor Science and …, 2016‏ - iopscience.iop.org
We present a review and primer on the subject of conductive bridging random access
memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …

Review of radiation effects on ReRAM devices and technology

Y Gonzalez-Velo, HJ Barnaby… - … Science and Technology, 2017‏ - iopscience.iop.org
A review of the ionizing radiation effects on resistive random access memory (ReRAM)
technology and devices is presented in this article. The review focuses on vertical devices …

Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors

B Ku, Y Abbas, AS Sokolov, C Choi - Journal of Alloys and Compounds, 2018‏ - Elsevier
The improved resistive switching (RS) characteristics of Pt/HfO 2/Ti structured RRAM are
demonstrated by engineering interface with argon (Ar) plasma irradiation. The Ar plasma …

Radiation effects in advanced and emerging nonvolatile memories

MJ Marinella - IEEE Transactions on Nuclear Science, 2021‏ - ieeexplore.ieee.org
Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical
direction and dominate the commercial nonvolatile memory market. However, several …

Reconfigurable memristive device technologies

AH Edwards, HJ Barnaby, KA Campbell… - Proceedings of the …, 2015‏ - ieeexplore.ieee.org
In this paper, we present a review of the state of the art in memristor technologies. Along with
ionic conducting devices [ie, conductive bridging random access memory (CBRAM)], we …

Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory

R Fang, Y Gonzalez Velo, W Chen, KE Holbert… - Applied Physics …, 2014‏ - pubs.aip.org
The total ionizing dose (TID) effect of gamma-ray (γ-ray) irradiation on HfOx based resistive
random access memory was investigated by electrical and material characterizations. The …

SiO2 based conductive bridging random access memory

W Chen, S Tappertzhofen, HJ Barnaby… - Journal of …, 2017‏ - Springer
We present a review on the subject of Conductive Bridging Random Access Memory
(CBRAM) based on copper-or silver-doped silicon dioxide. CBRAM is a promising type of …

Total ionizing dose hardened and mitigation strategies in deep submicrometer CMOS and beyond

E Chatzikyriakou, K Morgan… - IEEE Transactions on …, 2018‏ - ieeexplore.ieee.org
From man-made satellites and interplanetary missions to fusion power plants, electronic
equipment that needs to withstand various forms of irradiation is an essential part of their …

Single-event effect performance of a commercial embedded ReRAM

D Chen, H Kim, A Phan, E Wilcox… - … on Nuclear Science, 2014‏ - ieeexplore.ieee.org
We show the single-event effect characteristics of a production-level embedded resistive
memory. The resistive memory under investigation is a reduction-oxidation random access …

Evaluation of radiation effects in RRAM-based neuromorphic computing system for inference

Z Ye, R Liu, JL Taggart, HJ Barnaby… - IEEE Transactions on …, 2018‏ - ieeexplore.ieee.org
Neuromorphic computing systems built with resistive random access memory (RRAM) are
attractive solutions for implementing deep learning on-chip. In this paper, the single event …